A solution for the electroless deposition of gold-alloys onto a substrate
    3.
    发明公开
    A solution for the electroless deposition of gold-alloys onto a substrate 失效
    Lösungzur stromlosen Abscheidung von Goldlegierungen auf einem Substrat。

    公开(公告)号:EP0070061A1

    公开(公告)日:1983-01-19

    申请号:EP82200808.2

    申请日:1982-06-30

    发明人: Molenaar, Arian

    IPC分类号: C23C18/42

    CPC分类号: C23C18/44 C23C18/48 H05K3/244

    摘要: Method and solution to be used in the method for the electroless deposition of goid-alloy layers and patterns onto a substrate. The solution has a pH value between 11 and 14 and contains gold in the form of a complex compound, copper ions and a complex-forming compound for copper ions, formaldehyde and alkalimetal hydroxide for adjusting the pH, the complexing constant of the gold complex being at least 10 5 times that of the complexing constant of the copper complex.

    摘要翻译: 用于将金合金层和图案无电沉积到基底上的方法中的方法和解决方案。 该溶液的pH值在11和14之间,并且包含复合化合物形式的金,铜离子和用于铜离子的复合物形成化合物,用于调节pH的甲醛和碱金属氢氧化物,金络合物的络合常数 是铜络合物的络合常数的至少10 5倍。

    Lead immersion bath and method of supplificially exchanging a tin layer for a lead layer
    4.
    发明公开
    Lead immersion bath and method of supplificially exchanging a tin layer for a lead layer 失效
    Bleitauchbad und Verfahren zumOberflächen-Austauschen einer Zinnschicht durch eine Bleischicht。

    公开(公告)号:EP0276518A1

    公开(公告)日:1988-08-03

    申请号:EP87202642.2

    申请日:1987-12-29

    IPC分类号: C23C18/46

    摘要: A lead immersion bath and method of superficially exchanging a tin layer for a lead layer, and a lead-tin alloy layer, respectively, which bath comprises an alkaline solution of a lead (II) compound and a complexing agent, in which the complexing agent has been chosen so that the complex constant of the lead complex in the solution used is smaller than the dissociation constant of hydroxyplumbite ions. The lead-tin alloy layer is obtained by a thermal treatment between 183°C and 232°C.

    摘要翻译: 铅浸浴和表面交换用于铅层的锡层的铅浸渍浴和铅 - 锡合金层,该浴包含铅(II)化合物和络合剂的碱性溶液,其中络合剂 已经被选择使得所使用的溶液中的铅络合物的复数常数小于羟基石英离子的解离常数。 铅锡合金层通过183℃〜232℃的热处理得到。

    Method of autocatalytically tin-plating articles of copper or a copper alloy
    5.
    发明公开
    Method of autocatalytically tin-plating articles of copper or a copper alloy 失效
    Verfahren zur autokatalytischen Verzinnung von Kupfer- undKupferlegierungsgegenständen。

    公开(公告)号:EP0180265A1

    公开(公告)日:1986-05-07

    申请号:EP85201585.8

    申请日:1985-10-02

    IPC分类号: C23C18/46

    CPC分类号: C23C18/31

    摘要: Improvement of an electroless tin-plating method of articles of copper or of a copper alloy with a strongly alkaline solution which contains at least 0.20 mol/litre of bivalent tin ions and at least 1 mol/litre of alkalihydroxide at a temperature between 60 and 95 °C. The improvement consists of a pre-treatment with an acid solution of a bivalent tin salt and a complex former for Cu ++ and/or Sn ++ ions with which a layer of copper at the surface is exchanged for tin. The complex former preferably is thiourea.

    摘要翻译: 在60至95℃的温度下,对含有至少0.20mol /升二价锡离子和至少1mol /升碱金属氢氧化物的强碱性溶液的铜或铜合金制品的无电镀锡方法进行改进 该改进包括用二价锡盐的酸溶液和Cu +和/或Sn + +离子的复合物进行预处理,其中一层铜在 表面更换锡。 络合物优选为硫脲。

    Method of manufacturing finely structured metal patterns on metal or semiconductor surfaces
    7.
    发明公开
    Method of manufacturing finely structured metal patterns on metal or semiconductor surfaces 失效
    Verfahren zur Erzeugung fein strukturierter Metallmuster auf MetallorderHalbleiteroberflächen。

    公开(公告)号:EP0094711A1

    公开(公告)日:1983-11-23

    申请号:EP83200653.0

    申请日:1983-05-06

    IPC分类号: C23C18/54 H01L21/288

    CPC分类号: C23C18/1605 H01L21/288

    摘要: Manufacture of metal patterns on the surface of a substrate consisting of metal or a semiconductor compound while using a mask selected from Si0 2 or Si 3 N 4 which is first provided uniformly on the substrate from the vapour phase and is then etched away locally. The exposed parts are metallized by means of an electroless plating bath, if desired after a separate deposition of nuclei.

    摘要翻译: 在使用选自SiO 2或Si 3 N 4的掩模的同时,在由金属或半导体化合物构成的基板的表面上制造金属图案,其首先从气相在基板上均匀地提供,然后局部蚀刻掉。 暴露的部分通过化学镀浴进行金属化,如果需要,在分离沉积核之后。