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    Method of manufacturing a semiconductor device
    2.
    发明公开
    Method of manufacturing a semiconductor device 失效
    Verfahren zum Herstellen einer Halbleiteranordnung。

    公开(公告)号：EP0357116A1

    公开(公告)日：1990-03-07

    申请号：EP89202019.9

    申请日：1989-08-03

    申请人： Philips Electronics N.V.

    发明人： Haisma, Jan ,  Van Den Meerakker, Johannes Engelbertus A. M. ,  Van Vegchel, Josephus Henricus Catharina

    IPC分类号： H01L21/20 ,  H01L21/76 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L23/14

    CPC分类号： H01L21/3063 ,  H01L21/2007 ,  H01L21/304 ,  H01L21/3105 ,  H01L23/147 ,  H01L2924/0002 ,  Y10S148/026 ,  Y10S438/977 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device in which a silicon layer (8) is epitaxially grown on the surface of a doped monocrystalline semiconductor body (7), whereafter a connection is established between said semiconductor body (7) and a second semiconductor body (1) which is used as a supporting body, while at least one of the surfaces of the two bodies is firstly provided with an insulating layer (2,3) and a rigid connection is established between the bodies, whereafter the monocrystalline semiconductor body (7) is electrochemically etched away down to the epitaxially grown silicon layer (8), parts of the insulating layer (2,3) being removed prior to establishing the connection between the bodies (1,7), whereafter a layer of electrically conducting material (6) is deposited on the surface with a thickness which is larger than that of the insulating layer, whereafter a polishing treatment is performed at least down to the insulating layer.

    摘要翻译： 一种制造半导体器件的方法，其中在掺杂的单晶半导体本体（7）的表面上外延生长硅层（8），之后在所述半导体本体（7）和第二半导体本体（1）之间建立连接 ），而两个主体的至少一个表面首先设置有绝缘层（2,3），并且在主体之间建立刚性连接，之后单晶半导体本体（7） 电化学蚀刻掉到外延生长的硅层（8）上，在建立主体（1,7）之间的连接之前去除绝缘层（2,3）的部分，然后将一层导电材料（6） ）沉积在表面上，其厚度大于绝缘层的厚度，然后至少向下至绝缘层进行抛光处理。