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    Method for the optical recording of information and an optical recording element used in the method
    6.
    发明公开
    Method for the optical recording of information and an optical recording element used in the method 失效
    一种用于光学地记录信息，并且在该方法中使用的光学记录元件的方法。

    公开(公告)号：EP0224313A2

    公开(公告)日：1987-06-03

    申请号：EP86202080.7

    申请日：1986-11-24

    申请人： Philips Electronics N.V.

    发明人： Gravesteijn, Dirk Jan ,  Van der Poel, Carolus Johannes

    IPC分类号： G11B7/24

    CPC分类号： G11B7/243 ,  G11B7/00454 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2542 ,  G11B7/2572 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10S430/146 ,  Y10S430/165

    摘要： A method is provided for the optical recording of information in which an amorphous recording layer 4 having a composition according to formula (1) provided on a synthetic resin substrate (2) (Figure 1) in a maximum layer thickness of 150 nm is exposed to infrared laser light having a wavelength of 750-900 nm and pulsed in accordance with the binary information to be recorded with a pulse time of at most 200 ns. A cystalline area 6 (bit) having maximum dimensions of a few micrometres is formed in the amorphous layer in the exposed places. As optical recording element is also provided for use in the method.

    摘要翻译： 对的信息，其中（1）设置在150nm的最大层厚度的合成树脂基片（2）光记录到非晶态记录层4具有如下组成雅丁式提供了一种方法暴露于具有红外激光 的750-900纳米，雅舞的二进制信息的脉冲的波长要记录与至多200纳秒的脉冲时间。 具有几微米的最大尺寸为cystalline区域6（位）在暴露的地方非晶层形成。 如因此提供用于在该方法使用光记录元件。

    Radiation-emitting semiconductor diode
    9.
    发明公开
    Radiation-emitting semiconductor diode 失效
    Strahlung emittierende Halbleiterdiode。

    公开(公告)号：EP0544357A1

    公开(公告)日：1993-06-02

    申请号：EP92203545.6

    申请日：1992-11-18

    申请人： Philips Electronics N.V.

    发明人： Van der Poel, Carolus Johannes ,  Valster, Adriaan ,  Boermans, Michael Jozef Bernad

    IPC分类号： H01L33/00

    CPC分类号： H01L33/30 ,  H01L33/0025 ,  H01S5/20 ,  H01S5/3201 ,  H01S5/32325

    摘要： Radiation-emitting semiconductor diodes are used inter alia in information processing systems as diode lasers or LEDs. Such a radiation-emitting semiconductor diode comprises a active layer situated between two cladding layers, which layers each comprise a mixed crystal of III-V semiconductor materials, atoms of different elements, often having a certain degree of ordering, being present on at least one sublattice. An example is a InGaP/InAlGaP diode laser which emits at 670 nm and is highly suitable for various applications. There is a particular demand for diodes which have a high maximum operating temperature at a given wavelength.
    According to the invention, the composition of the semiconductor material of the active layer is so chosen that this layer has a compression strain, while the atoms of the different elements have a less orderly distribution at least in the semiconductor material of the active layer. This strongly reduces the string current, while the emission wavelength remains substantially unchanged. In a preferred embodiment, the distribution in the semiconductor materials of the cladding layers is also less orderly, which improves the confinement and thus the temperature dependence characteristics of the starting current. The maximum operating temperature of diode lasers according to the invention is considerably increased owing to a low starting current and a low temperature dependence of this starting current.

    摘要翻译： 辐射发射半导体二极管尤其用作信息处理系统中的二极管激光器或LED。 这种辐射发射半导体二极管包括位于两个覆层之间的有源层，该层各自包含III-V族半导体材料的混合晶体，不同元素的原子通常具有一定程度的排序，存在于至少一个 子格。 例如，InGaP / InAlGaP二极管激光器在670nm处发射并且非常适用于各种应用。 特别要求在给定波长下具有高的最高工作温度的二极管。 根据本发明，活性层​​的半导体材料的组成被选择为使得该层具有压缩应变，而不同元素的原子至少在有源层的半导体材料中具有较少的有序分布。 这强烈地降低了串电流，而发射波长基本上保持不变。 在优选实施例中，包覆层的半导体材料中的分布也不太有序，这改善了启动电流的约束和温度依赖特性。 由于起动电流低和起动电流的低温依赖性，本发明的二极管激光器的最大工作温度显着增加。