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    Optical recording element and method of recording information
    2.
    发明公开
    Optical recording element and method of recording information 失效
    Optisches Aufzeichnungselement und Verfahren zur Informationsaufzeichnung。

    公开(公告)号：EP0186227A1

    公开(公告)日：1986-07-02

    申请号：EP85201918.1

    申请日：1985-11-21

    申请人： Philips Electronics N.V.

    发明人： Rippens, Wilhelmus Gertrudes V. M. ,  van der Poel, Carolus Johannes

    IPC分类号： G11B7/24

    CPC分类号： G11B7/0062 ,  G11B7/243 ,  G11B7/257 ,  G11B2007/24314 ,  G11B2007/24316

    摘要： An erasable optical recording element is provided having a supporting plate which comprises a recording layer which has a Te-Se-Sb alloy. The ratio of the elements Te, Se and Sb in at.percent lies within a range in the Te-Se-Sb composition diagram which is bounded by a polygon having the corners Te 90 Se 8 Sb 2 - Te 78 Se 20 Sb 2 - Te 18 Se 52 Sb 30 - Te 28 Se 2 Sb 70 - Te 90 Se 2 Sb 80 . The layer thickness of the recording layer is between 80 and 300 nm. During recording the recording layer is converted by exposure to modulated laser light in the exposed places from a more ordered or crystalline state into a less ordered or amorphous state. The locally changed state can be read by means of laser light. A method of recording information is also described.

    摘要翻译： 提供了一种具有支撑板的可擦除光学记录元件，该支撑板包括具有Te-Se-Sb合金的记录层。 元素Te，Se和Sb的比值在Te-Se-Sb组成图中的范围内，Te-Se-Sb组成图由具有角Te90Se8Sb2-Te78Se20Sb2-Te18Se52Sb30-Te28Se2Sb70-Te90Se2Sb80的多边形界定。 记录层的层厚为80〜300nm。 在记录期间，记录层通过暴露在暴露位置的调制激光从更有序或结晶状态转换为较不有序或无定形的状态而被转换。 局部改变的状态可以通过激光读取。 还描述了记录信息的方法。

    Radiation-emitting semiconductor diode and method of manufacturing same
    3.
    发明公开
    Radiation-emitting semiconductor diode and method of manufacturing same 失效
    Lichtemittierender Halbleiterdiode和Herstellungsverfahren。

    公开(公告)号：EP0637112A1

    公开(公告)日：1995-02-01

    申请号：EP94201785.6

    申请日：1994-06-22

    申请人： PHILIPS ELECTRONICS N.V.

    发明人： van der Poel, Carolus Johannes ,  Valster, Adriaan ,  Ambrosius, Hubertus Petrus Mechtildus Maria

    IPC分类号： H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/32316 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432

    摘要： Radiation-emitting semiconductor diodes are used as laser diodes or LEDs inter alia in optical disc systems, laser printers and bar code readers. The emission wavelength in these cases lies preferably in the visible range of the spectrum. Known diodes have an active layer (3A) and cladding layers (2,4) which comprise either AlGaAs or InAlGaP. These known diodes have the disadvantage that they do not cover a portion of the visible spectrum between 880 and 600 nm.
    A diode according to the invention is characterized in that the active layer (3A) comprises Al x Ga 1-x As and the cladding layers (2,4) comprise Al y Ga w In 1-y-w P, while the active layer (3A) has such an aluminium content (x) and such a thickness (d) that the wavelength of the photoluminescence emission lies between approximately 770 and 690 nm. This results in the availability of (laser) diodes covering the entire spectrum from approximately 880 nm to 600 nm which operate satisfactorily, supply a high power, and are easy to manufacture. Preferably, the active layer comprises a (multiple) quantum well structure of alternating quantum well layers and barrier layers, both comprising AlGaAs, but with different aluminium contents. The active layer can also comprise AlGaAsP.

    摘要翻译： 辐射发射半导体二极管用作激光二极管或LED，特别是在光盘系统，激光打印机和条形码读取器中。 这些情况下的发射波长优选在光谱的可见光范围内。 已知的二极管具有包括AlGaAs或InAlGaP的有源层（3A）和覆层（2,4）。 这些已知的二极管的缺点是它们不覆盖880和600nm之间的可见光谱的一部分。 根据本发明的二极管的特征在于，有源层（3A）包括Al x Ga 1-x As，并且包层（2,4）包括AlyGawIn1-y-wP，而有源层（3A）具有这样的铝含量（x ）和这样的厚度（d），使得光致发光发射的波长在约770和690nm之间。 这导致覆盖从约880nm到600nm的整个光谱的（激光）二极管的可用性，其操作令人满意，提供高功率，并且易于制造。 优选地，有源层包括交替量子阱层和阻挡层（包括AlGaAs，但具有不同的铝含量）的（多个）量子阱结构。 有源层还可以包括AlGaAsP。

    Radiation-emitting semiconductor diode and method of manufacturing same
    6.
    发明授权
    Radiation-emitting semiconductor diode and method of manufacturing same 失效
    Lichtemittierende Halbleiterdiode和Herstellungsverfahren

    公开(公告)号：EP0637112B1

    公开(公告)日：1998-09-02

    申请号：EP94201785.6

    申请日：1994-06-22

    申请人： PHILIPS ELECTRONICS N.V.

    发明人： van der Poel, Carolus Johannes ,  Valster, Adriaan ,  Ambrosius, Hubertus Petrus Mechtildus Maria

    IPC分类号： H01S3/19 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/32316 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432

    摘要： Radiation-emitting semiconductor diodes are used as laser diodes or LEDs inter alia in optical disc systems, laser printers and bar code readers. The emission wavelength in these cases lies preferably in the visible range of the spectrum. Known diodes have an active layer (3A) and cladding layers (2,4) which comprise either AlGaAs or InAlGaP. These known diodes have the disadvantage that they do not cover a portion of the visible spectrum between 880 and 600 nm. A diode according to the invention is characterized in that the active layer (3A) comprises AlxGa1-xAs and the cladding layers (2,4) comprise AlyGawIn1-y-wP, while the active layer (3A) has such an aluminium content (x) and such a thickness (d) that the wavelength of the photoluminescence emission lies between approximately 770 and 690 nm. This results in the availability of (laser) diodes covering the entire spectrum from approximately 880 nm to 600 nm which operate satisfactorily, supply a high power, and are easy to manufacture. Preferably, the active layer comprises a (multiple) quantum well structure of alternating quantum well layers and barrier layers, both comprising AlGaAs, but with different aluminium contents. The active layer can also comprise AlGaAsP.

    摘要翻译： 辐射发射半导体二极管用作激光二极管或LED，特别是在光盘系统，激光打印机和条形码读取器中。 这些情况下的发射波长优选在光谱的可见光范围内。 已知的二极管具有包括AlGaAs或InAlGaP的有源层（3A）和覆层（2,4）。 这些已知的二极管的缺点是它们不覆盖880和600nm之间的可见光谱的一部分。 根据本发明的二极管的特征在于，有源层（3A）包括Al x Ga 1-x As，并且包层（2,4）包括AlyGawIn1-y-wP，而有源层（3A）具有这样的铝含量（x ）和这样的厚度（d），使得光致发光发射的波长在约770和690nm之间。 这导致覆盖从约880nm到600nm的整个光谱的（激光）二极管的可用性，其操作令人满意，提供高功率，并且易于制造。 优选地，有源层包括交替量子阱层和阻挡层（包括AlGaAs，但具有不同的铝含量）的（多个）量子阱结构。 有源层还可以包括AlGaAsP。

    Semiconductor laser array with reduced crosstalk and method of making the same
    7.
    发明公开
    Semiconductor laser array with reduced crosstalk and method of making the same 失效
    Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren。

    公开(公告)号：EP0634823A1

    公开(公告)日：1995-01-18

    申请号：EP94201948.0

    申请日：1994-07-06

    申请人： PHILIPS ELECTRONICS N.V.

    发明人： Valster, Adriaan ,  van der Poel, Carolus Johannes ,  Horikx, Jeroen Jan Lambertus

    IPC分类号： H01S3/25 ,  H01S3/19 ,  H01L21/363

    CPC分类号： H01S5/4031 ,  H01S5/02461 ,  H01S5/32325

    摘要： An array of semiconductor diode lasers (11, 12) is a very suitable radiation source for various applications such as optical read and write systems and laser printers. Such an array comprises a semiconductor body (10) with a substrate (1) and a layer structure provided thereon in which at least two lasers (11, 12) are formed which are mutually separated by a groove (20). In the known array, the groove (20) reaches down into the substrate (1), so that the lasers (11, 12) are electrically separated from one another.
    According to the invention, the array of lasers (11, 12) is provided with a groove (20) which is situated within the substrate (1) with a major portion (d) of its depth (D). As a result of this, the lasers (11, 12) of the array show a surprisingly low crosstalk. Preferably, the portion (d) of the groove (20) situated in the substrate (1) is at least 3 µm deep. The best results are obtained with depths (d) of approximately 10 up to at most 40 µm. In a very favourable embodiment, the device is provided at the upper side with a comparatively thick electrically and thermally well-conducting layer. In a preferred embodiment, the groove (20) is formed by reactive ion etching so that the groove (20) can be narrow and deep and the lasers (11, 12) will lie close together. A plasma comprising SiCl₄, Ar and CH₄ forms a particularly suitable etchant for lasers (11, 12) in the InGaP/InAlGaP material system.

    摘要翻译： 一组半导体二极管激光器（11,12）是用于各种应用的非常合适的辐射源，例如光学读取和写入系统和激光打印机。 这种阵列包括具有衬底（1）的半导体本体（10）和设置在其上的层结构，其中形成有由凹槽（20）相互分开的至少两个激光器（11,12）。 在已知的阵列中，槽（20）向下延伸到衬底（1）中，使得激光器（11,12）彼此电分离。 根据本发明，激光器阵列（11,12）设置有位于衬底（1）内的其深度（D）的主要部分（d）的凹槽（20）。 作为其结果，阵列的激光器（11,12）显示出惊人的低串扰。 优选地，位于基板（1）中的凹槽（20）的部分（d）至少为3μm深。 最好的结果是深度（d）大约10到最多40微米。 在非常有利的实施例中，该装置在上侧设置有比较厚的导电和导热良好的导电层。 在优选实施例中，通过反应离子蚀刻形成凹槽（20），使得凹槽（20）可以窄而深，并且激光器（11,12）将靠近在一起。 包含SiCl 4，Ar和CH 4的等离子体在InGaP / InAlGaP材料体系中形成用于激光器（11,12）的特别合适的蚀刻剂。

    Optical recording element and method of recording information
    8.
    发明授权
    Optical recording element and method of recording information 失效
    光学记录元件和记录信息的方法

    公开(公告)号：EP0186227B1

    公开(公告)日：1989-06-21

    申请号：EP85201918.1

    申请日：1985-11-21

    申请人： Philips Electronics N.V.

    发明人： Rippens, Wilhelmus Gertrudes V. M. ,  van der Poel, Carolus Johannes

    IPC分类号： G11B7/24

    CPC分类号： G11B7/0062 ,  G11B7/243 ,  G11B7/257 ,  G11B2007/24314 ,  G11B2007/24316

    摘要： An erasable optical recording element is provided having a supporting plate which comprises a recording layer which has a Te-Se-Sb alloy. The ratio of the elements Te, Se and Sb in at.percent lies within a range in the Te-Se-Sb composition diagram which is bounded by a polygon having the corners Te90Se8Sb2 - Te78Se20Sb2 - Te18Se52Sb30 - Te28Se2Sb70 - Te90Se2Sb80. The layer thickness of the recording layer is between 80 and 300 nm. During recording the recording layer is converted by exposure to modulated laser light in the exposed places from a more ordered or crystalline state into a less ordered or amorphous state. The locally changed state can be read by means of laser light. A method of recording information is also described.