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    SEMICONDUCTOR LASER DIODE WITH INTEGRATED HEATING REGION
    3.
    发明公开
    SEMICONDUCTOR LASER DIODE WITH INTEGRATED HEATING REGION 审中-公开
    具有集成加热区域的半导体激光二极管

    公开(公告)号：EP3202058A1

    公开(公告)日：2017-08-09

    申请号：EP15846828.0

    申请日：2015-09-30

    Applicant: Applied Optoelectronics, Inc.

    Inventor： ZHENG, Jun ,  ANSELM, Klaus Alexander ,  ZHANG, Huanlin ,  CHANG, Hung-Lun

    IPC: H04B10/40 ,  H01S3/04 ,  H01S5/12

    CPC classification number: H01S5/02453 ,  G02B6/12 ,  G02B6/12014 ,  G02B2006/12164 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/02461 ,  H01S5/0261 ,  H01S5/0268 ,  H01S5/0287 ,  H01S5/0612 ,  H01S5/22 ,  H01S5/4087 ,  H01S2301/176 ,  H04B10/40 ,  H04J14/0282

    Abstract: A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.

    Abstract translation: 具有集成加热的半导体激光二极管通常包括集成在同一半导体结构或芯片中的激光区和加热区。 激光区和加热区分别包括形成半导体结构的半导体层的第一和第二部分，并分别包括由半导体层形成的有源区的第一和第二部分。 分开的激光和加热器电极电连接到相应的激光和加热区域，用于驱动具有驱动电流的激光和加热区域。 因此可以独立于激光区域驱动加热区域，并且可以将热量从加热区域传导通过半导体层到激光区域，从而允许更有效地控制温度。

    MOUNT FOR SEMICONDUCTOR DEVICES USING CONFORMABLE CONDUCTIVE LAYERS, AND METHOD
    9.
    发明公开
    MOUNT FOR SEMICONDUCTOR DEVICES USING CONFORMABLE CONDUCTIVE LAYERS, AND METHOD 审中-公开
    支持拥有柔性导电层和方法半导体器件

    公开(公告)号：EP2751886A1

    公开(公告)日：2014-07-09

    申请号：EP12828509.5

    申请日：2012-08-29

    Applicant: Intellectual Light, Inc.

    Inventor： GROVE, Robert, E.

    IPC: H01S3/04

    CPC classification number: H01S5/02461 ,  H01S3/0405 ,  H01S5/02236 ,  H01S5/02264 ,  H01S5/024 ,  H01S5/02469 ,  H01S5/02476

    Abstract: A mount for semiconductor laser devices comprises thermally conductive anode and cathode blocks on either side of a semiconductor laser device such as a laser diode which may be either a single laser diode or a diode bar having a plurality of emitters. Interposed between at least the anode block and the anode of the semiconductor laser device is a sheet of conformable electrically conductive material with high thermal conductivity such as pyrolytic highly-oriented graphite. A second sheet of such electrically and thermally conductive conformable material may be interposed between the cathode of the semiconductor laser device and the cathode block. A thermally conductive, but electrically insulating, spacer of essentially the same thickness as the laser diode or bar surrounds the diode or bar to prevent mechanical damage while still permitting the conformable material to be maintained in a compressed state and directing current through the laser device.

    Semiconductor laser device
    10.
    发明公开
    Semiconductor laser device 审中-公开
    半导体激光装置

    公开(公告)号：EP2642622A2

    公开(公告)日：2013-09-25

    申请号：EP13159934.2

    申请日：2013-03-19

    Applicant: Nichia Corporation

    Inventor： Masui, Shingo ,  Kawata, Yasuhiro ,  Hirao, Tsuyoshi

    IPC: H01S5/042 ,  H01S5/16 ,  H01S5/22

    CPC classification number: H01S5/223 ,  H01S5/0021 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/16

    Abstract: The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser element 100A and a support member 200. The semiconductor laser element 100a includes a first electrode 13, a substrate 11, and a semiconductor structure 12 having an emitting facet and a reflecting facet, a second electrode 15, and a pad 16, in this order. The semiconductor laser element 100A is connected to a support member 200 at its pad 16 side via a connecting member 300. The emitting-side end portion of the second electrode 15 is spaced apart from the emitting facet of the semiconductor structure 12, and the emitting-side end portion of the pad 16 is located at an outer side than the emitting-side end portion the second electrode 15.

    Abstract translation: 本发明旨在防止在半导体激光器件中发生COD和光输出的快速退化。 半导体激光器元件包括半导体激光元件100A和支撑构件200.半导体激光元件100a包括第一电极13，基板11和具有发射小面和反射小面的半导体结构12，第二电极15， 和垫16，按此顺序。 半导体激光元件100A经由连接部件300与焊盘16侧的支撑部件200连接。第二电极15的射出侧端部与半导体结构体12的射出端面分离，射出侧端部 焊盘16的侧端部位于比第二电极15的出射侧端部靠外侧的位置。

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