专利检索 ap:("Quantum Semiconductor, LLC" OR "Augusto, Carlos, J.R.P." OR "DINIZ, Pedro, N., C.") AND inv:"DINIZ, Pedro, N.C." 第 1 页

1.

发明公开
CIRCUITRY FOR IMAGE SENSORS WITH AVALANCHE PHOTODIODES 有权
标题翻译：电路带雪崩光电二极管图像传感器的

公开(公告)号：EP1570645A1

公开(公告)日：2005-09-07

申请号：EP03782345.7

申请日：2003-12-09

申请人： Quantum Semiconductor, LLC , Augusto, Carlos, J.R.P. , DINIZ, Pedro, N., C.

发明人： AUGUSTO, Carlos, J.R.P. , DINIZ, Pedro, N.C.

IPC分类号： H04N3/15 , H04N5/335 , H01L31/02

CPC分类号： H04N5/3745 , H04N5/374

摘要： In-pixel circuit architectures for CMOS image sensors are disclosed, which are suitable for avalanche photo-diodes operating either in linear or in non-linear mode. These architectures apply in particular to photo-diodes and image sensors in which CMOS devices are fabricated on thin-film silicon-on-insulator substrates.

2.

发明授权
CIRCUITRY FOR IMAGE SENSORS WITH AVALANCHE PHOTODIODES 有权
标题翻译：电路带雪崩光电二极管图像传感器的

公开(公告)号：EP1570645B1

公开(公告)日：2006-08-09

申请号：EP03782345.7

申请日：2003-12-09

申请人： Quantum Semiconductor, LLC

发明人： AUGUSTO, Carlos, J.R.P. , DINIZ, Pedro, N.C.

IPC分类号： H04N3/15 , H04N5/335 , H01L31/02

CPC分类号： H04N5/3745 , H04N5/374

摘要： In-pixel circuit architectures for CMOS image sensors are disclosed, which are suitable for avalanche photo-diodes operating either in linear or in non-linear mode. These architectures apply in particular to photo-diodes and image sensors in which CMOS devices are fabricated on thin-film silicon-on-insulator substrates.