QUADRATURE OFFSET POWER AMPLIFIER
    1.
    发明公开
    QUADRATURE OFFSET POWER AMPLIFIER 有权
    具有平方率OFFSET功率放大器

    公开(公告)号:EP1749342A1

    公开(公告)日:2007-02-07

    申请号:EP05754923.0

    申请日:2005-05-19

    申请人: RAYTHEON COMPANY

    发明人: SELIN, John, R.

    摘要: An amplifier having a first transistor with an output coupled to a common output node and a switch for coupling a control electrode of the first transistor to a first bias source to bias such first transistor to a conducting state during a relatively high power operating mode or for removing such control electrode from the first bias source to place the first transistor in a non-conducting condition during a relatively low power operating mode selectively in accordance with a control signal. A second transistor has an output coupled to the common output node and a second bias source coupled to a control electrode to the second transistor to bias such second transistor to a conducting state during both the relatively high power operating mode and the relatively low power operating mode.

    QUADRATURE OFFSET POWER AMPLIFIER
    2.
    发明授权
    QUADRATURE OFFSET POWER AMPLIFIER 有权
    具有平方率OFFSET功率放大器

    公开(公告)号:EP1749342B1

    公开(公告)日:2011-03-30

    申请号:EP05754923.0

    申请日:2005-05-19

    申请人: RAYTHEON COMPANY

    发明人: SELIN, John, R.

    摘要: An amplifier having a first transistor with an output coupled to a common output node and a switch for coupling a control electrode of the first transistor to a first bias source to bias such first transistor to a conducting state during a relatively high power operating mode or for removing such control electrode from the first bias source to place the first transistor in a non-conducting condition during a relatively low power operating mode selectively in accordance with a control signal. A second transistor has an output coupled to the common output node and a second bias source coupled to a control electrode to the second transistor to bias such second transistor to a conducting state during both the relatively high power operating mode and the relatively low power operating mode.