DOHERTY AMPLIFIER
    5.
    发明公开
    DOHERTY AMPLIFIER 审中-公开

    公开(公告)号:EP4391044A1

    公开(公告)日:2024-06-26

    申请号:EP23214905.4

    申请日:2023-12-07

    摘要: A Doherty amplifier according to the present disclosure includes a substrate, a first transistor provided on the substrate, the first transistor including a plurality of first gate electrodes extending in a first direction, a plurality of first drain electrodes extending in the first direction, a first gate bus bar to which a first signal of two signals obtained by dividing an input signal is input and to which the plurality of first gate electrodes are electrically connected, and a first drain bus bar provided so as to dispose the plurality of first gate electrodes and the plurality of first drain electrodes between the first gate bus bar and the first drain bus bar, the plurality of first drain electrodes being electrically connected to the first drain bus bar, a second transistor provided on the substrate, the transistor including a plurality of second gate electrodes extending in a second direction, a plurality of second drain electrodes extending in the second direction, a second gate bus bar having a first end to which a second signal of the two signals is input, the plurality of second gate electrodes being electrically connected to the second gate bus bar, and a second drain bus bar provided so as to dispose the plurality of second gate electrodes and the plurality of second drain electrodes between the second gate bus bar and the second drain bus bar, the plurality of second drain electrodes being electrically connected to the second drain bus bar, a combining node provided on the substrate and combining the first signal amplified by the first transistor and the second signal amplified by the second transistor, a first line provided on the substrate and connecting the first drain bus bar and the combining node, and a second line provided on the substrate, connecting the second drain bus bar and the combining node, and connected to a second end of the second drain bus bar located diagonally across the second transistor with respect to the first end.

    DOHERTY AMPLIFIER
    8.
    发明公开
    DOHERTY AMPLIFIER 审中-公开

    公开(公告)号:EP3236583A4

    公开(公告)日:2018-08-01

    申请号:EP14908433

    申请日:2014-12-18

    申请人: TOSHIBA KK

    摘要: According an embodiment, a Doherty amplifier includes a carrier amplifier, a peak amplifier, a first line and a second line. The carrier amplifier amplifies a signal and outputs a first output signal. The peak amplifier amplifies the signal and outputs a second output signal. The first line is connected to the carrier amplifier. The second line includes a first end connected to the peak amplifier and a second end connected to the first line. A characteristic impedance of the first end is lower than a characteristic impedance of the second end.

    Doherty amplifier
    9.
    发明授权

    公开(公告)号:EP3054589B1

    公开(公告)日:2018-07-04

    申请号:EP15153816.2

    申请日:2015-02-04

    发明人: Moronval, Xavier

    摘要: A Doherty amplifier (100, 200) having a set of amplifiers (120, 122) comprising a main amplifier (120) and at least one peak amplifier (122), each amplifier of the set of amplifiers (120, 122) having an input and an output, the at least one peak amplifier (122) configured to become operational at a respective threshold power, the Doherty amplifier (100, 200) further comprising: a Doherty amplifier output node (126) coupled to the outputs of the set of amplifiers (120, 122) through an impedance network (108), the impedance network (108) comprising: impedance inverting elements (128) configured to match the impedance of the outputs of the set of amplifiers (120, 122) at the Doherty amplifier output node (126); and a matching system (132) coupled to the outputs of the set of amplifiers (120, 122), the matching system (132) configured to impedance match the modulated impedance output of the main amplifier (120) to the impedance of the peak amplifiers (122).