公开(公告)号：EP4441890A1

公开(公告)日：2024-10-09

申请号：EP21966531.2

申请日：2021-12-02

Applicant: Telefonaktiebolaget LM Ericsson (publ)

Inventor： BAO, Mingquan ,  GUSTAFSSON, David

IPC: H03H7/48 ,  H01P5/12 ,  H03F3/189 ,  H03F3/20 ,  H03F3/24 ,  H03F3/60

CPC classification number: H01P5/12 ,  H03F3/607 ,  H03F3/245 ,  H03F3/211 ,  H03F3/195 ,  H03F2203/4573120130101 ,  H03F2200/54120130101 ,  H03F2200/45120130101 ,  H03F2200/53720130101 ,  H03F2200/19820130101 ,  H03F3/604

公开(公告)号：EP4014323B1

公开(公告)日：2024-08-21

申请号：EP20853444.6

申请日：2020-06-25

IPC: H04B1/04 ,  H03C3/02 ,  H03C3/18 ,  H03F1/02 ,  H03F3/24 ,  H04L27/12 ,  H03F1/42 ,  H03F3/217 ,  H03F3/193 ,  H03F3/21 ,  H04L27/36

CPC classification number: H03F3/245 ,  H03F2200/45120130101 ,  H03F3/193 ,  H03F3/211 ,  H03F2200/32420130101 ,  H04B2001/04520130101 ,  H04B2001/040820130101 ,  H04B1/0475 ,  H04L27/361 ,  H03F1/0227 ,  H03F3/2178 ,  H03F3/2171 ,  H03F1/025 ,  H03F1/42

公开(公告)号：EP3493402B1

公开(公告)日：2024-07-03

申请号：EP19152372.9

申请日：2008-08-22

IPC: H03F3/21 ,  H03G1/00 ,  H03G3/30 ,  H03F3/195 ,  H03F1/02 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45 ,  H03F3/72 ,  H04B1/04 ,  H03D7/14

CPC classification number: H03F1/0277 ,  H03F3/193 ,  H03F3/211 ,  H03F3/245 ,  H03F3/45179 ,  H03F3/72 ,  H03F2200/33620130101 ,  H03F2200/45120130101 ,  H03F2203/2114220130101 ,  H03F2203/2119620130101 ,  H03F2203/722720130101 ,  H03F2203/723620130101 ,  H03G1/0088 ,  H03G3/225 ,  H03G3/3042 ,  H04B1/0483

公开(公告)号：EP4391371A1

公开(公告)日：2024-06-26

申请号：EP22901834.6

申请日：2022-12-01

Applicant: Samsung Electronics Co., Ltd. ,  Research Business Foundation Sungkyunkwan University

Inventor： YANG, Youngoo ,  JEE, Seunghoon ,  CHEN, Yifei ,  KANG, Hyunuk ,  KIM, Kyoungtae ,  KIM, Changwook ,  WOO, Youngyoon ,  CHOI, Woojin

IPC: H03F1/02 ,  H03F3/21 ,  H03F3/60 ,  H03F1/56

CPC classification number: H03F3/245 ,  H03F3/195 ,  H03F1/0288 ,  H03F2200/45120130101 ,  H03F1/565 ,  H03F3/211 ,  H03F2200/38720130101 ,  H03F2200/53720130101 ,  H03F2200/54120130101

Abstract: The present disclosure relates to a 5th generation (5G) or a pre-5G communication system for supporting a higher data transmission rate after a 4th generation (4G) communication system such as long-term evolution (LTE). According to various embodiments, a Doherty power amplifier of a wireless communication system, the Doherty power amplifier includes a first power amplifier, a second power amplifier, a first transmission line connected to an output end of the first power amplifier, a second transmission line connected to an input end of the second power amplifier, a first network, and a second network, the first network may interconnect a first node connected with one end of the first transmission line and a second node connected with an output end of the second power amplifier, the one end of the first transmission line may be positioned on an opposite side with respect to the output end of the first power amplifier, and the second network may connect the first node, the second node, and a third node which is an output end of the Doherty power amplifier.

公开(公告)号：EP3076546B1

公开(公告)日：2018-12-26

申请号：EP16162898.7

申请日：2016-03-30

Applicant: NXP B.V.

Inventor： JORRITSMA, Fré Jorrit ,  KOERTS, Mattheus Johan ,  MOSTERT, Fred

IPC: H03F3/217 ,  H03F3/181 ,  H03F1/02 ,  H03F3/185 ,  H03F3/21

CPC classification number: H03F1/0205 ,  H03F3/181 ,  H03F3/185 ,  H03F3/211 ,  H03F3/217 ,  H03F3/2173 ,  H03F3/2175 ,  H03F2200/03 ,  H03F2200/129 ,  H03F2200/351 ,  H03F2203/21142

Abstract: One example discloses a class-D amplifier apparatus, comprising: an amplifier circuit, having a set of input terminals, a set of output terminals, a quiescent circuit configuration, and an active circuit configuration; an amplifier control device, coupled to the amplifier circuit; wherein the amplifier control device is configured to place the amplifier circuit in the quiescent circuit configuration before measuring a voltage between the set of output terminals; wherein the amplifier control device is configured to add the output terminals voltage from the set of input terminals before placing the amplifier circuit in the active circuit configuration.

公开(公告)号：EP2975774B1

公开(公告)日：2018-12-05

申请号：EP15176925.4

申请日：2015-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Lee, Jae Hoon ,  Seo, Ho Soo

IPC: H04B1/18 ,  H04B1/00

CPC classification number: H03F3/217 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/21109 ,  H03F2203/21112 ,  H04B1/006 ,  H04B1/18 ,  H04B1/40 ,  H04B7/0413

Abstract: An amplifying module having one input terminal and one output terminal and passing an antenna signal input through the input terminal towards the output terminal. The amplifying module includes a first switch connected to the input terminal, a plurality of filters selectable by the first switch, a plurality of amplifiers respectively connected to the plurality of filters and amplifying a signal that has passed through the filters, and a second switch for connecting the amplified signal to the output terminal.

公开(公告)号：EP1673858B1

公开(公告)日：2018-10-24

申请号：EP04789219.5

申请日：2004-09-23

Applicant: QUALCOMM Incorporated

Inventor： DUPUIS, Timothy, J. ,  PAUL, Susanne, A.

IPC: H03F1/52 ,  H03F3/189 ,  H03F3/193 ,  H03F3/24 ,  H03F3/21 ,  H03F3/42

CPC classification number: H03F1/523 ,  H03F1/52 ,  H03F3/189 ,  H03F3/193 ,  H03F3/211 ,  H03F3/24 ,  H03F3/423

Abstract: A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.

公开(公告)号：EP3035527B1

公开(公告)日：2018-10-17

申请号：EP15194798.3

申请日：2015-11-16

Applicant: Intel Corporation

Inventor： XU, Hongtao ,  PALASKAS, Georgios

IPC: H03F3/189 ,  H03F3/26 ,  H03F3/60 ,  H01L21/768 ,  H01L27/02 ,  H03F3/193 ,  H03F3/21 ,  H03F3/213 ,  H03F3/45

CPC classification number: H01L27/0207 ,  H01L21/76895 ,  H03F3/189 ,  H03F3/193 ,  H03F3/211 ,  H03F3/213 ,  H03F3/26 ,  H03F3/45179 ,  H03F3/602 ,  H03F3/604 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/21142

Abstract: Apparatus having structures implementing compact and symmetric multi-way transformer combiners are described herein. In an embodiment, each unit device cell of a plurality unit device cells may include two metal layers on top of the unit device cell coupled to a multi-way transformer combiner by one of the two metal layers such that the configuration of the unit device cells with the multi-way transformer combiner is symmetric. Additional apparatus, systems, and methods are disclosed.

公开(公告)号：EP3384600A1

公开(公告)日：2018-10-10

申请号：EP16808959.7

申请日：2016-11-30

Applicant: Thales

Inventor： GIRARD, Dimitri ,  FASSE, Dominique ,  KASSAB, Quentin ,  CHAHBAZIAN, Max ,  LACHATER, Laurent

IPC: H03F3/72 ,  H01P5/12 ,  H03K17/567

CPC classification number: H03K17/567 ,  H03F1/0277 ,  H03F3/211 ,  H03F3/3016 ,  H03F3/72 ,  H03F2200/06 ,  H03F2200/09 ,  H03F2200/405 ,  H03F2200/534 ,  H03F2200/541 ,  H03F2203/30078 ,  H03F2203/30111 ,  H03F2203/7221 ,  H03F2203/7236

Abstract: The invention relates to a switching circuit (52) for a cavity radio-frequency combiner, said switching circuit (52) being intended to connect an amplifier to the cavity combiner and said circuit (52) being adapted for average-power radio waves.

公开(公告)号：EP2359473B1

公开(公告)日：2018-10-10

申请号：EP09793660.3

申请日：2009-12-10

Applicant: QUALCOMM Incorporated

Inventor： CHEN, Minghui

IPC: H03F1/22 ,  H03F1/52 ,  H03F3/195 ,  H03F3/24 ,  H03F3/72 ,  H03G3/30 ,  H04B1/04 ,  H03G1/00 ,  H03F3/21

CPC classification number: H03F1/223 ,  H03F1/523 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/294 ,  H03F2203/21178 ,  H03F2203/7236 ,  H03G1/0088

Abstract: An amplifier with multiple stages and having improved reliability is described. The multiple amplifier stages are coupled in parallel and include at least one switchable amplifier stage. Each switchable amplifier stage may be operated in an on state or an off state and includes a gain transistor and a cascode transistor. The gain transistor amplifies an input signal and provides an amplified signal in the on state and is disabled in the off state. The cascode transistor buffers the amplified signal and provides an output signal in the on state and is disabled based on an off voltage in the off state. The off voltage may be greater than zero volts or may have one of multiple possible values. The off voltage may be generated based on an output signal level, e.g., may be set to different values for different ranges of output signal level.