公开(公告)号：EP2994999A1

公开(公告)日：2016-03-16

申请号：EP14794237.9

申请日：2014-02-27

申请人： Raytheon Company

发明人： AUST, Timothy D.

IPC分类号： H03F3/24

CPC分类号： H01F27/40 ,  H01F27/2823 ,  H01F27/29 ,  H03F1/565 ,  H03F3/193 ,  H03F3/211 ,  H03F3/217 ,  H03F3/2178 ,  H03F3/245 ,  H03F3/601 ,  H03F3/604 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/306 ,  H03F2200/321 ,  H03F2200/387 ,  H03F2200/39 ,  H03F2200/391 ,  H03F2200/393 ,  H03F2200/399 ,  H03F2200/423 ,  H03F2200/429 ,  H03F2200/451 ,  H03F2200/541

摘要： A wideband power amplifier module includes a plurality of switch mode amplifiers and a plurality of impedance amplifier modules. Each switch mode amplifier includes an input to receive an input signal, and an RF output to output an RF power signal. The switch mode amplifier includes at least one semiconductor switch formed from gallium nitride (GaN). Each impedance amplifier module includes an output electrically connected to the RF output of a respective switch mode amplifier. The impedance amplifier module is configured to inject at least one impedance control signal to each RF output.