公开(公告)号：EP1416540A1

公开(公告)日：2004-05-06

申请号：EP02749325.3

申请日：2002-07-22

申请人： Renesas Technology Corp. ,  Hitachi ULSI Systems Co.,Ltd.

发明人： TANAKA, Toshihiro c/o Semicond.& Integr. Circuits ,  UMEMOTO, Yukiko c/o Semicond.& Integr. Circuits ,  HIRAKI, Mitsuru c/o Semicond.& Integr. Circuits ,  SHINAGAWA, Yutaka c/o HITACHI ULSI SYST CO., LTD. ,  FUJITO, Masamichi c/o HITACHI ULSI SYST.CO., LTD. ,  SUZUKAWA, Kazufumi c/o HITACHI ULSI SYST.CO.,LTD. ,  TANIKAWA, Hiroyuki c/o Semicond.& Integr. Circ. ,  YAMAKI, Takashi c/o Semicond.& Integr. Circuits ,  KAMIGAKI, Yoshiaki c/o Central Research Lab. ,  MINAMI, Shinichi c/o Semicond.& Integr. Circuits ,  KATAYAMA, Kozo c/o Semicond. & Integr. Circuits ,  MATSUZAKI, Nozomu c/o Central Research Laboratory

IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L27/115 ,  H01L21/8247

CPC分类号： G11C16/26 ,  G11C5/025 ,  G11C8/08 ,  G11C16/04 ,  G11C16/0425 ,  G11C16/0433 ,  G11C16/08 ,  G11C16/24 ,  G11C16/30 ,  H01L21/28 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/4234 ,  H01L29/66825 ,  H01L29/7885 ,  H01L29/792

摘要： A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc

公开(公告)号：EP1416540B1

公开(公告)日：2016-09-07

申请号：EP02749325.3

申请日：2002-07-22

申请人： Renesas Electronics Corporation ,  Hitachi ULSI Systems Co.,Ltd.

发明人： TANAKA, Toshihiro c/o Semicond.& Integr. Circuits ,  UMEMOTO, Yukiko c/o Semicond.& Integr. Circuits ,  HIRAKI, Mitsuru c/o Semicond.& Integr. Circuits ,  SHINAGAWA, Yutaka c/o HITACHI ULSI SYST CO., LTD. ,  FUJITO, Masamichi c/o HITACHI ULSI SYST.CO., LTD. ,  SUZUKAWA, Kazufumi c/o HITACHI ULSI SYST.CO.,LTD. ,  TANIKAWA, Hiroyuki c/o Semicond.& Integr. Circ. ,  YAMAKI, Takashi c/o Semicond.& Integr. Circuits ,  KAMIGAKI, Yoshiaki c/o Central Research Lab. ,  MINAMI, Shinichi c/o Semicond.& Integr. Circuits ,  KATAYAMA, Kozo c/o Semicond. & Integr. Circuits ,  MATSUZAKI, Nozomu c/o Central Research Laboratory

IPC分类号： H01L27/115 ,  G11C16/04 ,  H01L29/423 ,  H01L29/792 ,  H01L29/788

CPC分类号： G11C16/26 ,  G11C5/025 ,  G11C8/08 ,  G11C16/04 ,  G11C16/0425 ,  G11C16/0433 ,  G11C16/08 ,  G11C16/24 ,  G11C16/30 ,  H01L21/28 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/4234 ,  H01L29/66825 ,  H01L29/7885 ,  H01L29/792

摘要： Each non-volatile memory cell (1) of the device has MOS-type transistor (3) for information storage and MOS-type transistor (4) for selecting transistor (3). The gate dielectric strength and thickness of gate insulation film of transistor (4) are lower than that of transistor (3).