-
公开(公告)号：EP1416540B1
公开(公告)日：2016-09-07
申请号：EP02749325.3
申请日：2002-07-22
发明人： TANAKA, Toshihiro c/o Semicond.& Integr. Circuits , UMEMOTO, Yukiko c/o Semicond.& Integr. Circuits , HIRAKI, Mitsuru c/o Semicond.& Integr. Circuits , SHINAGAWA, Yutaka c/o HITACHI ULSI SYST CO., LTD. , FUJITO, Masamichi c/o HITACHI ULSI SYST.CO., LTD. , SUZUKAWA, Kazufumi c/o HITACHI ULSI SYST.CO.,LTD. , TANIKAWA, Hiroyuki c/o Semicond.& Integr. Circ. , YAMAKI, Takashi c/o Semicond.& Integr. Circuits , KAMIGAKI, Yoshiaki c/o Central Research Lab. , MINAMI, Shinichi c/o Semicond.& Integr. Circuits , KATAYAMA, Kozo c/o Semicond. & Integr. Circuits , MATSUZAKI, Nozomu c/o Central Research Laboratory
IPC分类号： H01L27/115 , G11C16/04 , H01L29/423 , H01L29/792 , H01L29/788
CPC分类号： G11C16/26 , G11C5/025 , G11C8/08 , G11C16/04 , G11C16/0425 , G11C16/0433 , G11C16/08 , G11C16/24 , G11C16/30 , H01L21/28 , H01L21/28273 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42328 , H01L29/42332 , H01L29/4234 , H01L29/66825 , H01L29/7885 , H01L29/792
摘要： Each non-volatile memory cell (1) of the device has MOS-type transistor (3) for information storage and MOS-type transistor (4) for selecting transistor (3). The gate dielectric strength and thickness of gate insulation film of transistor (4) are lower than that of transistor (3).
-
公开(公告)号：EP1416540A1
公开(公告)日：2004-05-06
申请号：EP02749325.3
申请日：2002-07-22
发明人： TANAKA, Toshihiro c/o Semicond.& Integr. Circuits , UMEMOTO, Yukiko c/o Semicond.& Integr. Circuits , HIRAKI, Mitsuru c/o Semicond.& Integr. Circuits , SHINAGAWA, Yutaka c/o HITACHI ULSI SYST CO., LTD. , FUJITO, Masamichi c/o HITACHI ULSI SYST.CO., LTD. , SUZUKAWA, Kazufumi c/o HITACHI ULSI SYST.CO.,LTD. , TANIKAWA, Hiroyuki c/o Semicond.& Integr. Circ. , YAMAKI, Takashi c/o Semicond.& Integr. Circuits , KAMIGAKI, Yoshiaki c/o Central Research Lab. , MINAMI, Shinichi c/o Semicond.& Integr. Circuits , KATAYAMA, Kozo c/o Semicond. & Integr. Circuits , MATSUZAKI, Nozomu c/o Central Research Laboratory
IPC分类号： H01L29/788 , H01L29/792 , H01L27/115 , H01L21/8247
CPC分类号： G11C16/26 , G11C5/025 , G11C8/08 , G11C16/04 , G11C16/0425 , G11C16/0433 , G11C16/08 , G11C16/24 , G11C16/30 , H01L21/28 , H01L21/28273 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42328 , H01L29/42332 , H01L29/4234 , H01L29/66825 , H01L29/7885 , H01L29/792
摘要： A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc
-
公开(公告)号：EP1416540B8
公开(公告)日：2016-12-07
申请号：EP02749325.3
申请日：2002-07-22
发明人： TANAKA, Toshihiro c/o Semicond.& Integr. Circuits , UMEMOTO, Yukiko c/o Semicond.& Integr. Circuits , HIRAKI, Mitsuru c/o Semicond.& Integr. Circuits , SHINAGAWA, Yutaka c/o HITACHI ULSI SYST CO., LTD. , FUJITO, Masamichi c/o HITACHI ULSI SYST.CO., LTD. , SUZUKAWA, Kazufumi c/o HITACHI ULSI SYST.CO.,LTD. , TANIKAWA, Hiroyuki c/o Semicond.& Integr. Circ. , YAMAKI, Takashi c/o Semicond.& Integr. Circuits , KAMIGAKI, Yoshiaki c/o Central Research Lab. , MINAMI, Shinichi c/o Semicond.& Integr. Circuits , KATAYAMA, Kozo c/o Semicond. & Integr. Circuits , MATSUZAKI, Nozomu c/o Central Research Laboratory
IPC分类号： H01L27/115 , G11C16/04 , H01L29/423 , H01L29/792 , H01L29/788
CPC分类号： G11C16/26 , G11C5/025 , G11C8/08 , G11C16/04 , G11C16/0425 , G11C16/0433 , G11C16/08 , G11C16/24 , G11C16/30 , H01L21/28 , H01L21/28273 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42328 , H01L29/42332 , H01L29/4234 , H01L29/66825 , H01L29/7885 , H01L29/792
摘要： Each non-volatile memory cell (1) of the device has MOS-type transistor (3) for information storage and MOS-type transistor (4) for selecting transistor (3). The gate dielectric strength and thickness of gate insulation film of transistor (4) are lower than that of transistor (3).
摘要翻译： 器件的每个非易失性存储单元（1）具有用于信息存储的MOS型晶体管（3）和用于选择晶体管（3）的MOS型晶体管（4）。 晶体管（4）的栅极绝缘膜的栅极绝缘强度和厚度比晶体管（3）低。
-
-
搜索结果
3 条记录 (耗时 0.015 秒)
