公开(公告)号：EP3291239A1

公开(公告)日：2018-03-07

申请号：EP17187447.2

申请日：2017-08-23

申请人： Renesas Electronics Corporation

发明人： Saito, Tomoya ,  Fujito, Masamichi ,  Ando, Koichi ,  Hashimoto, Takashi

IPC分类号： G11C16/34

CPC分类号： G06F11/0727 ,  G06F11/073 ,  G06F11/0793 ,  G06F2212/72 ,  G11C16/28 ,  G11C16/3431 ,  G11C29/50004

摘要： The present invention aims at providing a flash memory that can perform a refresh operation at an appropriate time before a read error occurs. The controller performs the first read operation in which the memory cell as the read target is made to draw out the potential of one of the bit lines, the bit line potential controller is made to draw out the potential of the other of the bit lines at the first speed, and concurrently, the sense amplifier is made to read data; the second read operation in which the memory cell as the read target is made to draw out the potential of one of the bit lines, the bit line potential controller is made to draw out the potential of the other of the bit lines at the second speed faster than the first speed, and concurrently, the sense amplifier is made to read data; and the refresh operation in which, when the data read by the first read operation and the data read by the second read operation are determined to be different, the data stored in the memory cell as the read target is rewritten.

摘要翻译： 本发明旨在提供一种闪存，其能够在发生读取错误之前的适当时间执行刷新操作。 控制器执行第一读取操作，在该第一读取操作中，使作为读取目标的存储器单元引出一个位线的电位，使位线电势控制器将位线中的另一个的电位引出到 第一速度，同时使读出放大器读取数据; 执行第二读取操作，其中使作为读取目标的存储器单元取出一个位线的电位，使位线电位控制器以第二速度取出另一位线的电位 比第一速度快，同时使读出放大器读取数据; 以及刷新操作，其中当由第一读取操作读取的数据和由第二读取操作读取的数据被确定为不同时，存储在作为读取目标的存储器单元中的数据被重写。

公开(公告)号：EP2950332A1

公开(公告)日：2015-12-02

申请号：EP15169419.7

申请日：2015-05-27

申请人： Renesas Electronics Corporation

发明人： Inoue, Masao ,  Maruyama, Yoshiki ,  Saito, Tomoya ,  Yoshitomi, Atsushi

IPC分类号： H01L21/28 ,  H01L29/66 ,  H01L29/792

CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L29/4234 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： An improvement is achieved in the performance of a semiconductor device including a memory element. Over a semiconductor substrate, a gate electrode for the memory element is formed via an insulating film as a gate insulating film for the memory element. The insulating film includes first, second, third, fourth, and fifth insulating films in order of being apart from the substrate. The second insulating film has a charge storing function. The band gap of each of the first and third insulating films is larger than a band gap of the second insulating film. The band gap of the fourth insulating film is smaller than the band gap of the third insulating film. The band gap of the fifth insulating film is smaller than the band gap of the fourth insulating film.

摘要翻译： 在包括存储元件的半导体器件的性能方面实现了改进。 在半导体衬底上，经由绝缘膜形成用于存储元件的栅电极作为用于存储元件的栅绝缘膜。 绝缘膜以与基板分开的顺序包括第一，第二，第三，第四和第五绝缘膜。 第二绝缘膜具有电荷存储功能。 第一绝缘膜和第三绝缘膜中的每一个的带隙大于第二绝缘膜的带隙。 第四绝缘膜的带隙小于第三绝缘膜的带隙。 第五绝缘膜的带隙小于第四绝缘膜的带隙。