OPTICAL RESPONSE MEASURING DEVICE AND OPTICAL RESPONSE MEASURING METHOD
    2.
    发明公开
    OPTICAL RESPONSE MEASURING DEVICE AND OPTICAL RESPONSE MEASURING METHOD 审中-公开
    光学响应测量装置和光学响应测量方法

    公开(公告)号:EP3206014A1

    公开(公告)日:2017-08-16

    申请号:EP15848227.3

    申请日:2015-10-05

    申请人: Riken

    摘要: The optical response measuring device 100 of a certain embodiment of the present invention is provided with a light source 122, first and second wavelength conversion elements 126 and 164, and a light intensity sensor array 168. The light source generates a pair of light beams including light beams of first and second wavelengths, and the first wavelength conversion element generates measurement light LM of a measurement wavelength whose phase is maintained with relative to the pair of light beams LP incident thereon. The measurement light is irradiated to an object for measurement 50, and the detection light is then made incident on the second wavelength conversion element. From reference light LR that carries the phase of the pair of light beams and light for which the phase is to be determined in the detection light LS, the second wavelength conversion element generates modulated reference light LD. The modulated reference light is modulated to have first and second local intensities in accordance with the first and second phases of detection light that are influenced respectively by first and second points under illumination in the illumination area. The first and second local intensities are then measured by the light intensity sensor array 168.

    摘要翻译: 本发明的特定实施例的光学响应测量装置100设置有光源122,第一和第二波长转换元件126和164以及光强度传感器阵列168.光源产生一对光束,包括 第一和第二波长的光束,并且第一波长转换元件产生相对于入射在其上的一对光束LP保持相位的测量波长的测量光LM。 测量光照射到测量对象50,然后检测光入射到第二波长转换元件上。 第二波长转换元件从在检测光LS中携带一对光束的相位和要确定相位的光的参考光LR中产生调制参考光LD。 调制后的参考光被调制为具有第一和第二局部强度,该第一和第二局部强度依照被照明区域中的照明下的第一和第二点分别影响的检测光的第一和第二相位。 然后通过光强度传感器阵列168测量第一和第二局部强度。

    BNA CRYSTAL
    3.
    发明公开

    公开(公告)号:EP2589688A1

    公开(公告)日:2013-05-08

    申请号:EP11800598.2

    申请日:2011-06-10

    申请人: Riken

    IPC分类号: C30B29/54 C07C205/06 C30B7/08

    摘要: An object of the present invention is to produce a non-conventional high-quality BNA single crystal. Another object of the present invention is to provide a process for producing the above-described high-quality BNA single crystal. Specifically, the present invention provides a BNA crystal characterized by having a half-value width of diffraction peak X-ray intensity of 100 seconds or less in a rocking curve measurement by X-ray diffraction method.

    摘要翻译: 本发明的一个目的是制造非常规的高质量BNA单晶。 本发明的另一目的是提供一种生产上述高质量BNA单晶的方法。 即,本发明提供一种BNA晶体,其特征在于,在利用X射线衍射法的摇摆曲线测定中,衍射峰X射线强度的半值宽度为100秒以下。