公开(公告)号：EP1631983A1

公开(公告)日：2006-03-08

申请号：EP04767237.3

申请日：2004-06-03

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： GHYSELEN, Bruno ,  AULNETTE, Cécile ,  BATAILLOU, Benoit ,  MAZURE, Carlos ,  MORICEAU, Hubert

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： The invention relates to a method for simultaneously obtaining at least one pair of structures (51, 52) each having a useful layer (110, 120) placed on a substrate (71,2). This method is characterized by comprising the following steps consisting of: a) preparing a row structure (1) having a useful layer placed on a supporting substrate (2); b) forming a fragilization area inside said useful layer whereby defining a front useful layer (110) and a rear useful layer (120); c) adhering a stiffening substrate (71) to said front useful layer (110); d) removing the stack of layers along the fragilization area in order to obtain two row structures (2), the first (51) containing the supporting substrate (2) and the rear useful area (120), and the second (52) containing the stiffening substrate (71) and the front useful layer (110). The invention is for use in the fields of electronics, optoelectronics or optics.

公开(公告)号：EP1631984A1

公开(公告)日：2006-03-08

申请号：EP04767238.1

申请日：2004-06-03

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： AULNETTE, Cécile ,  BATAILLOU, Benoît ,  GHYSELEN, Bruno ,  MORICEAU, Hubert

IPC分类号： H01L21/762 ,  H01L21/20

CPC分类号： H01L21/76254 ,  H01L21/76259

摘要： The invention relates to a method for obtaining a structure having at least one supporting substrate (3), an ultra-thin layer produced from a source substrate (1), particularly made of semiconductor material and optionally having an inserted layer. The inventive method comprises the following steps: a) adhering, by molecular adhesion, a supporting substrate (3) to the front face (10) of a source substrate (1) that has a fragilization area (12) which delimits a useful layer (13) to be transferred whose width is distinctly larger than that of said ultra-thin layer (130); b) removing said supporting substrate (3) from the remainder (14) of the source substrate (1) along said fragilization area (12) whereby obtaining an intermediate structure having at least said transferred useful layer (13) and said supporting substrate (3); c) thinning this transferred useful layer (13) until obtaining the ultra-thin layer. The invention is for use in the manufacture of substrates in the fields of electronics, optoelectronics or optics.

摘要翻译： 制造具有至少一个支撑基底和超薄层的半导体结构的方法。 该方法包括：贴合的支撑衬底的源基板，分离沿着弱化区的有用层，以获得在中间结构至少包括转移有用层和支撑基底，以及处理所述转移有用层，以获得对超薄层 支持基板。 源基片包括前表面和前表面下方的薄弱区域确实定义有用层，并且有用的层足够厚，以承受热处理而不形成缺陷在其中以便做到了能薄型化，以形成超薄层 ， 将所得的超薄层适用于在电子，光电子或光学领域的应用中使用。

公开(公告)号：EP1902463B1

公开(公告)日：2011-09-14

申请号：EP06777736.7

申请日：2006-07-12

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： DAVAL, Nicolas ,  KERDILES, Sébastien ,  AULNETTE, Cécile

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/31055 ,  H01L21/31116

摘要： The invention concerns a method for making a substrate adapted to be used in the field of electronics, optoelectronics and optics, characterized in that it includes at least the following successive steps: a) depositing on a donor substrate (1) an insulating layer (2) whereof the thickness is not less than 20 nm and whereof the roughness is not less than 3 angstroms RMS, for a sweep of 2 νm x 2 νm; b) smoothing treatment (SP) of the free surface (20) of said insulating layer (2), using a gas plasma, formed in a chamber under gas pressure higher than 0.25 Pa, said plasma being generated by means of a radio frequency RF generator, which enables said insulating layer (2) to be imparted with a power density higher than 0.6 W/cm2, the duration of said smoothing treatment being not less than 10 seconds; c) forming a weakened zone (10) by implanting atomic species, inside said donor substrate (1), to delimit therein a so-called 'active' layer (11) and a residue (12).

公开(公告)号：EP2294611A1

公开(公告)日：2011-03-16

申请号：EP09772296.1

申请日：2009-06-12

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： DAVAL, Nicolas ,  KONONCHUK, Oleg ,  GUIOT, Eric ,  AULNETTE, Cécile ,  LALLEMENT, Fabrice ,  FIGUET, Christophe ,  LANDRU, Didier

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/76256

摘要： The present invention relates to a process for manufacturing a structure comprising a germanium layer (3) on a support substrate (1), characterised in that it comprises the following steps: (a) formation of an intermediate structure (10) comprising said support substrate (1), a silicon oxide layer (20) and said germanium layer (3), the silicon oxide layer (20) being in direct contact with the germanium layer (3), (b) application to said intermediate structure (10) of a heat treatment, in a neutral or reducing atmosphere, at a defined temperature and for a defined time, to diffuse at least part of the oxygen from the silicon oxide layer (20) through the germanium layer (3).

公开(公告)号：EP1668693A1

公开(公告)日：2006-06-14

申请号：EP04769613.3

申请日：2004-09-30

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： DAVAL, Nicolas ,  GHYSELEN, Bruno ,  AULNETTE, Cécile ,  RAYSSAC, Olivier ,  CAYREFOURCQ, Ian

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/933

摘要： The invention provides a method of producing a structure comprising a thin layer (2') of semiconductive material on a support substrate (20), said thin layer (2') being obtained from a donor substrate (10) comprising an upper layer (2) of semiconductor material, the method being characterized in that it comprises: - forming on said upper layer (2) a bonding layer (3) of a material that accepts diffusion of an element of the material of the upper layer (2); - cleaning said bonding layer (3) for mastering its bonding adhesion; - bonding the donor substrate (10), from the side of the bonding layer (3) previously formed on the upper layer (2) and cleaned, to the support substrate (20); and - diffusing said element from the upper layer into the bonding layer to homogenize the concentration of said element in the bonding layer and said upper layer, to constitute said thin layer (2') of the structure with said bonding layer and said upper layer.

公开(公告)号：EP1547143A2

公开(公告)日：2005-06-29

申请号：EP03784416.4

申请日：2003-08-11

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  AULNETTE, Cécile ,  OSTERNAUD, Bénédite

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L22/20

摘要： The invention relates to a method of preparing a thin layer of semiconductor material, the method including a step (1050') of correcting the thickness of the layer, said step of correcting thickness of the layer itself comprising the following operations: acquiring a measured thickness profile of the layer; deducing thickness correction specifications from the measured thickness profile; and correcting the thickness of the layer in accordance with said specifications; the method being characterized in that thickness correction implements a technique which simultaneously treats the entire surface of the layer, while locally and selectively adapt layer thickness in different regions of the layer surface. The invention also relates to an associated machine.

公开(公告)号：EP1522097A2

公开(公告)日：2005-04-13

申请号：EP03762850.0

申请日：2003-07-09

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  AULNETTE, Cécile ,  OSTERNAUD, Bénédicte

IPC分类号： H01L21/762

CPC分类号： H01L21/76259 ,  H01L21/76254

摘要： Method of producing a structure comprising a thin layer of semiconductor material obtained from a wafer (10), the wafer (10) comprising a lattice parameter matching layer (2) comprising an upper layer of semiconductor material having a first lattice parameter, a film (3) of semiconductor material which has a nominal lattice parameter substantially different from the first lattice parameter and is strained by the matching layer (2), a relaxed layer (4) having a nominal lattice parameter substantially identical to the first lattice parameter, the metod comprising transfer of the relaxed layer (4) and the strained film (3) to a receiving substrate (5). Structures produced according to one of the processes according to the invention.

公开(公告)号：EP1588416B1

公开(公告)日：2009-03-25

申请号：EP04700491.6

申请日：2004-01-07

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  AULNETTE, Cécile ,  OSTERNAUD, Bénédite ,  AKATSU, Takeshi ,  LEVAILLANT, Yves, Matthieu

IPC分类号： H01L21/762

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259

摘要： Method of recycling a donor wafer (10) after having taken off a useful layer comprising a material chosen from semiconductor materials, the donor wafer (10) comprising successively a substrate (1) and a multi-layer structure (I), the multi-layer structure (I), before taking-off, comprising the useful layer to take off, the process comprising removal of substance on the side where the taking-off took place, characterized in that, after the removal of substance, at least a part of the multi-layer structure (I') remains, this at least part of the buffer structure (I') including at least one other useful layer that can be taken off, without a supplementary step of reforming a useful layer. This document also relates to: methods of taking-off a thin layer from at least one recyclable donor wafer (10) according to the invention, recyclable donor wafers (10) according to the invention.

公开(公告)号：EP1654757A2

公开(公告)日：2006-05-10

申请号：EP04767800.8

申请日：2004-07-28

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  AULNETTE, Cécile ,  RAYSSAC, Olivier

IPC分类号： H01L21/762

CPC分类号： H01L21/76251

摘要： The invention relates to a semiconductor-on-insulator structure, comprising a part which is made of a semiconductor material and a part which is made of an electrically insulating material, said materials being coupled to each other. Elastic stress is present in the semiconductor material. The part made of electrically insulating material has a viscosity temperatureTG which is higher than the viscosity temperature TG SiO2 of SiO2. The invention also relates to a method for the production of said semiconductor-on-insulator structure.

公开(公告)号：EP1532677A2

公开(公告)日：2005-05-25

申请号：EP03792600.3

申请日：2003-08-26

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  AULNETTE, Cécile ,  OSTERNAUD, Bénédite ,  LE VAILLANT, Yves-Mathieu ,  AKATSU, Takeshi

IPC分类号： H01L21/762

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259

摘要： Method of recycling a donor wafer (10) after taking off at least one useful layer, the donor wafer (10) comprising successively a substrate (1), a buffer structure (1) and, before taking-off, a useful layer. The method comprises removal of substance relating to part of the donor wafer (10) on the side where the taking-off took place, such that, after removal of substance, there remains at least part of the buffer structure (1) capable of being reused as at least part of a buffer structure (1) during a subsequent taking-off of a useful layer. The present document also relates to: - a method of producing a donor wafer (10) which can be recycled according to the invention; - methods of taking a thin layer off a donor wafer (10) which can be recycled according to the invention; - donor wafers (10) which can be recycled according to the invention.