公开(公告)号：EP1678754A1

公开(公告)日：2006-07-12

申请号：EP04805334.2

申请日：2004-10-28

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： NGUYEN, Nguyet-Phuong ,  CAYREFOURCQ, Ian ,  LAGAHE-BLANCHARD, Christelle ,  BOURDELLE, Konstantin ,  TAUZIN, Aurélie ,  FOURNEL, Franck

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method for self-supported transfer of a fine layer, wherein: at least one species of ions is implanted in a source-substrate at a given depth in relation to the surface of the source-substrate according to a certain dosage; a stiffener, which is in intimate contact with the source-substrate, is applied; said source-substrate undergoes heat treatment at a given temperature during a given period of time in order to create an embrittled, buried area substantially at said given depth without causing the fine layer to become thermally detached; a controlled energy pulse is applied to the source-substrate in a temporally localized manner in order to cause self-supported detachment of a fine layer which is defined between the surface and the embrittled buried layer in relation to the rest of the source-substrate.

公开(公告)号：EP1559139A2

公开(公告)日：2005-08-03

申请号：EP03795839.4

申请日：2003-10-30

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： CAYREFOURCQ, Ian ,  BEN MOHAMED, Nadia ,  LAGAHE-BLANCHARD, Christelle ,  NGUYEN, Nguyet-Phuong

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method of detaching a thin film from a source substrate comprises the following steps: • implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; • splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.

公开(公告)号：EP1678755A1

公开(公告)日：2006-07-12

申请号：EP04805336.7

申请日：2004-10-28

申请人： S.O.I. Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： NGUYEN, Nguyet-Phuong ,  CAYREFOURCQ, Ian ,  LAGAHE-BLANCHARD, Christelle

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method for the catastrophic transfer of a thin layer. The inventive method comprises the following steps consisting in: implanting a first ion or gas species at a given depth and a second ion or gas species in a source substrate, whereby the first species can generate defects and the second species can occupy said defects; applying a stiffener such that it is in close contact with the source substrate; applying a heat treatment to the source substrate at a given temperature for a given period of time, such as to create a weakened buried zone essentially at the given depth without causing the thermal detachment of a thin layer; and applying a localised energy supply, for example, mechanical stresses, to the source substrate such as to cause the catastrophic detachment of a thin layer having a face, opposite said face, with a roughness lower than a given threshold.