公开(公告)号：EP1559139A2

公开(公告)日：2005-08-03

申请号：EP03795839.4

申请日：2003-10-30

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： CAYREFOURCQ, Ian ,  BEN MOHAMED, Nadia ,  LAGAHE-BLANCHARD, Christelle ,  NGUYEN, Nguyet-Phuong

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method of detaching a thin film from a source substrate comprises the following steps: • implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; • splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.

公开(公告)号：EP1678754A1

公开(公告)日：2006-07-12

申请号：EP04805334.2

申请日：2004-10-28

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： NGUYEN, Nguyet-Phuong ,  CAYREFOURCQ, Ian ,  LAGAHE-BLANCHARD, Christelle ,  BOURDELLE, Konstantin ,  TAUZIN, Aurélie ,  FOURNEL, Franck

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method for self-supported transfer of a fine layer, wherein: at least one species of ions is implanted in a source-substrate at a given depth in relation to the surface of the source-substrate according to a certain dosage; a stiffener, which is in intimate contact with the source-substrate, is applied; said source-substrate undergoes heat treatment at a given temperature during a given period of time in order to create an embrittled, buried area substantially at said given depth without causing the fine layer to become thermally detached; a controlled energy pulse is applied to the source-substrate in a temporally localized manner in order to cause self-supported detachment of a fine layer which is defined between the surface and the embrittled buried layer in relation to the rest of the source-substrate.

公开(公告)号：EP1789999A1

公开(公告)日：2007-05-30

申请号：EP04765971.9

申请日：2004-09-16

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  ASM INTERNATIONAL N.V.

发明人： BOURDELLE, Konstantin ,  DAVAL, Nicolas ,  CAYREFOURCQ, Ian ,  VAN AERDE, Steven, R., A. ,  DE BLANK, Marinus, J. ,  VAN DER JEUGD, Cornelius, A.

IPC分类号： H01L21/316 ,  H01L21/762

CPC分类号： H01L21/31612 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271

摘要： The invention relates to a of manufacturing a silicon dioxide layer (2) of low roughness, comprising the step of: - depositing a layer of silicon dioxide (2) over a substrate (1) by a low pressure chemical vapour deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas / TEOS flow ratio is between 0.5 and 100; - annealing said silicon dioxide layer at a temperature between 600°C and 1200°C, for a duration between 10 minutes and 6 hours.

公开(公告)号：EP1719179A1

公开(公告)日：2006-11-08

申请号：EP04714396.1

申请日：2004-02-25

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： DUPONT, Frédéric ,  CAYREFOURCQ, Ian

IPC分类号： H01L27/146 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469

摘要： A method of manufacturing a photodetecting device, by providing a first wafer that includes a photosensitive layer made of a semiconductor material and a second wafer that includes a circuit layer of electronic components, with one of the photosensitive layer or the circuit layer incorporating a field isolation layer; bonding the first and second wafers to form a structure comprising successively the circuit layer, the field isolation layer and the photosensitive layer; and forming electrically conductive vias to electrically connect the photosensitive layer to at least some of the electronic components of the circuit layer. Also, photodetecting devices prepared by these methods.

公开(公告)号：EP1668693A1

公开(公告)日：2006-06-14

申请号：EP04769613.3

申请日：2004-09-30

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： DAVAL, Nicolas ,  GHYSELEN, Bruno ,  AULNETTE, Cécile ,  RAYSSAC, Olivier ,  CAYREFOURCQ, Ian

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/933

摘要： The invention provides a method of producing a structure comprising a thin layer (2') of semiconductive material on a support substrate (20), said thin layer (2') being obtained from a donor substrate (10) comprising an upper layer (2) of semiconductor material, the method being characterized in that it comprises: - forming on said upper layer (2) a bonding layer (3) of a material that accepts diffusion of an element of the material of the upper layer (2); - cleaning said bonding layer (3) for mastering its bonding adhesion; - bonding the donor substrate (10), from the side of the bonding layer (3) previously formed on the upper layer (2) and cleaned, to the support substrate (20); and - diffusing said element from the upper layer into the bonding layer to homogenize the concentration of said element in the bonding layer and said upper layer, to constitute said thin layer (2') of the structure with said bonding layer and said upper layer.

公开(公告)号：EP1861873A1

公开(公告)日：2007-12-05

申请号：EP06725289.0

申请日：2006-03-23

申请人： S.O.I.TEC. Silicon on Insulator Technologies S.A.

发明人： LETERTRE, Fabrice ,  GHYSELEN, Bruno ,  CAYREFOURCQ, Ian

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/76251

摘要： The invention relates to a method of producing a structure comprising at least one semiconductor material for use in microelectronics, optoelectronics, optics, etc. The inventive method comprises the following steps consisting in: equipping a support (10) which is made from a first material with a thin monocrystalline layer (22) of a second material which is different from the first, said layer being transferred to the support; and performing a pre-determined heat treatment such as at least to reinforce the bonding interface (12) between the thin layer and the support. The method is characterised in that the thickness (e1) of the thin layer is selected as a function of the difference between the thermal expansion coefficients of the first and second materials and as a function of the parameters of said pre-determined heat treatment, such that the stresses exerted by said treatment on the support/transferred thin layer assembly leave same intact. The invention is also characterised in that it comprises an additional step in which an additional thickness (22') of the second material in the monocrystalline state is deposited on the thin layer. The invention is suitable for the production of hetero-substrates comprising a thick useful layer.

公开(公告)号：EP1911085B1

公开(公告)日：2011-10-12

申请号：EP06809161.0

申请日：2006-07-06

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： AULNETTE, Cécile ,  CAYREFOURCQ, Ian ,  MAZURE, Carlos

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer, which method comprises the following stages: (a) formation of a step of determined height around the periphery of the wafer, the mean thickness of the wafer at the step being less than the mean thickness of the rest of the wafer; (b) protection of said step against the implantation of atomic species; and (c) implantation of atomic species through that face of the wafer having said step, so as to form an implanted zone at a determined implant depth, said film being determined, on one side, by the implanted face of the wafer and, on the other side, by the implanted zone. The invention also relates to a wafer obtained by said method.

公开(公告)号：EP1911085A2

公开(公告)日：2008-04-16

申请号：EP06809161.0

申请日：2006-07-06

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： AULNETTE, Cécile ,  CAYREFOURCQ, Ian ,  MAZURE, Carlos

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer, which method comprises the following stages: (a) formation of a step of determined height around the periphery of the wafer, the mean thickness of the wafer at the step being less than the mean thickness of the rest of the wafer; (b) protection of said step against the implantation of atomic species; and (c) implantation of atomic species through that face of the wafer having said step, so as to form an implanted zone at a determined implant depth, said film being determined, on one side, by the implanted face of the wafer and, on the other side, by the implanted zone. The invention also relates to a wafer obtained by said method.

公开(公告)号：EP1678755A1

公开(公告)日：2006-07-12

申请号：EP04805336.7

申请日：2004-10-28

申请人： S.O.I. Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： NGUYEN, Nguyet-Phuong ,  CAYREFOURCQ, Ian ,  LAGAHE-BLANCHARD, Christelle

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method for the catastrophic transfer of a thin layer. The inventive method comprises the following steps consisting in: implanting a first ion or gas species at a given depth and a second ion or gas species in a source substrate, whereby the first species can generate defects and the second species can occupy said defects; applying a stiffener such that it is in close contact with the source substrate; applying a heat treatment to the source substrate at a given temperature for a given period of time, such as to create a weakened buried zone essentially at the given depth without causing the thermal detachment of a thin layer; and applying a localised energy supply, for example, mechanical stresses, to the source substrate such as to cause the catastrophic detachment of a thin layer having a face, opposite said face, with a roughness lower than a given threshold.