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1.发明公开METHOD OF DETACHING A THIN FILM AT MODERATE TEMPERATURE AFTER CO-IMPLANTATION 有权方法用于去除薄膜中温FOR KOIMPLANTATION
公开(公告)号：EP1559139A2
公开(公告)日：2005-08-03
申请号：EP03795839.4
申请日：2003-10-30
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method of detaching a thin film from a source substrate comprises the following steps: • implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; • splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.
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公开(公告)号：EP2212910B1
公开(公告)日：2011-03-02
申请号：EP08843202.6
申请日：2008-10-21
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The present invention relates to a process for splitting a semiconductor substrate having an identification notch (4) on its periphery, which process comprises the steps of: (a) creating a weakened zone in the substrate; (b) splitting the substrate along the weakened zone, the splitting comprising the initiation, in a predetermined sector (R) on the periphery of the substrate, of a splitting wave followed by the propagation of said wave into the substrate, characterized in that: - the weakened zone created in step (a) is obtained by the implantation of atomic species into the substrate, the substrate being held in place on a portion of its periphery, during the implantation, by a fastening device (5), - in that, during the splitting step (b), said portion is placed in the splitting-wave initiation sector (R), and in that during step (b) the notch (4) is positioned so that it is in the quarter (S1 ) of the periphery of the substrate diametrically opposite the sector (R) for initiating the splitting wave or in the quarter (S2) of the periphery of the substrate centred on said sector (R).
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公开(公告)号：EP1831922A1
公开(公告)日：2007-09-12
申请号：EP04806549.4
申请日：2004-12-28
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/76254
摘要： The invention proposes a method for determining the thickness of a part of a donor substrate which is to be transferred onto a support substrate, said part being intended to be thereafter submitted to a selected finishing sequence comprising at least one operation, the method being characterized in that a minimum thickness to be transferred is determined for said transferred part: to present, after each operation of the finishing sequence, a density of killing holes less than said maximal density, and to reach said selected thickness once the complete finishing sequence achieved.
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4.发明公开THIN LAYER TRANSFER METHOD WHEREIN A CO-IMPLANTATION STEP IS PERFORMED ACCORDING TO CONDITIONS AVOIDING BLISTERS FORMATION AND LIMITING ROUGHNESS 审中-公开薄膜转移过程中，与COIMPLANTIERUNGSSCHRITT条件下，避免VOID和粗糙的限制执行
公开(公告)号：EP1792338A1
公开(公告)日：2007-06-06
申请号：EP04769600.0
申请日：2004-09-21
发明人： NGUYEN, Nguyet, Phuong , BEN MOHAMED, Nadia , BOUSSAGOL, Alice , AKATSU, Takeshi , SUCIU, Gabriela
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506
摘要： The invention proposes a method for transferring a thin layer wherein a co-implantation step of two different species is performed. The implantation energies of said first and second species are selected such that said second species peak is located in the thickness of the donor substrate within said embrittlement zone and more in-depth than said first species spreading zone, and the implantation doses of said first and second species are selected to be substantially similar, the first species implantation dose counting from 40% to 60% of the total implantation dose.
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公开(公告)号：EP2255385A1
公开(公告)日：2010-12-01
申请号：EP09725673.9
申请日：2009-03-26
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/187 , H01L21/67248 , H01L21/68714
摘要： In order to reduce and render uniform the surface roughness and variations in thickness of a layer after detachment (post-fracture) of a donor substrate (18), the mean temperature of the donor substrate (18) during implantation thereof is controlled so as to be in the range 20°C to 150°C with a maximum temperature variation of less than 30°C.
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公开(公告)号：EP2212910A1
公开(公告)日：2010-08-04
申请号：EP08843202.6
申请日：2008-10-21
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The present invention relates to a process for splitting a semiconductor substrate having an identification notch (4) on its periphery, which process comprises the steps of: (a) creating a weakened zone in the substrate; (b) splitting the substrate along the weakened zone, the splitting comprising the initiation, in a predetermined sector (R) on the periphery of the substrate, of a splitting wave followed by the propagation of said wave into the substrate, characterized in that: - the weakened zone created in step (a) is obtained by the implantation of atomic species into the substrate, the substrate being held in place on a portion of its periphery, during the implantation, by a fastening device (5), - in that, during the splitting step (b), said portion is placed in the splitting-wave initiation sector (R), and in that during step (b) the notch (4) is positioned so that it is in the quarter (S1 ) of the periphery of the substrate diametrically opposite the sector (R) for initiating the splitting wave or in the quarter (S2) of the periphery of the substrate centred on said sector (R).
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7.发明公开PROCEDE D' OBTENTION D' UNE COUCHE MINCE DE QUALITE ACCRUE PAR CO-IMPLANTATION ET RECUIT THERMIQUE 审中-公开程序获得高品质的薄膜，BY和COIMPLANTATION热退火
公开(公告)号：EP1652230A2
公开(公告)日：2006-05-03
申请号：EP04786008.5
申请日：2004-07-29
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/324
摘要： The invention relates to a method for creating a structure comprising a thin semiconductor material layer on a substrate, comprising the following steps: a species is implanted underneath a surface of a donor substrate wherefrom the thin layer is to be made in order to create an area of embrittlement inside the thickness of the donor substrate; the surface of the donor substrate which underwent implantation is placed in intimate contact with a support substrate; the donor substrate is detached at said area of embrittlement in order to transfer part of the donor substrate onto the support substrate and to form the thin layer thereon. The invention is characterized in that the implementation step involves co-implementation of at least two different atomic species in order to minimize low frequency roughness in the structure obtained after detachment; the method also comprises a finishing step comprising at least one rapid thermal annealing operation in order to minimize high frequency roughness in the structure obtained after detachment.
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公开(公告)号：EP1652229A1
公开(公告)日：2006-05-03
申请号：EP04744304.9
申请日：2004-08-04
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： The invention relates to a method of detachment of a layer from a wafer of material chosen from semiconductor materials, the method comprising the steps consisting of: creating an embrittlement zone in the thickness of the wafer, the said embrittlement zone defining the layer to be detached in the thickness of the wafer;subjecting the wafer to a treatment to perform detachment of the layer, at the level of the embrittlement zone; characterized in that during the creation of the embrittlement zone, a localized starting region of this zone is constituted, at the level of which the embrittlement zone locally has greater embrittlement, so that this starting region corresponds to a super-embrittled region of the embrittlement zone.
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公开(公告)号：EP1831922B9
公开(公告)日：2010-02-24
申请号：EP04806549.4
申请日：2004-12-28
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/76254
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公开(公告)号：EP1831922B1
公开(公告)日：2009-08-26
申请号：EP04806549.4
申请日：2004-12-28
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/76254
摘要： The invention proposes a method for determining the thickness of a part of a donor substrate which is to be transferred onto a support substrate, said part being intended to be thereafter submitted to a selected finishing sequence comprising at least one operation, the method being characterized in that a minimum thickness to be transferred is determined for said transferred part: to present, after each operation of the finishing sequence, a density of killing holes less than said maximal density, and to reach said selected thickness once the complete finishing sequence achieved.
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