公开(公告)号：EP1287527A4

公开(公告)日：2006-02-08

申请号：EP01929943

申请日：2001-05-03

申请人： SAIFUN SEMICONDUCTORS LTD

发明人： BLOOM ILAN ,  EITAN BOAZ ,  COHEN ZEEV ,  FINZI DAVID ,  MAAYAN EDUARDO

IPC分类号： G11C5/00 ,  G11C16/02 ,  G11C11/56 ,  G11C16/04 ,  G11C16/34 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： G11C16/3481 ,  G11C11/5671 ,  G11C16/0475 ,  G11C16/3454 ,  G11C16/3468

摘要： A method for programming an NROM cell which includes the steps of applying a drain (VD), a source (VS) and a gate voltage (VG) to the cell and verifying a programmed or a non-programmed state of the cell. If the cell is in the non-programmed state, the method includes the steps of increasing the drain voltage and maintaining the gate voltage at a constant level during at least a part of the step of increasing. The steps of applying, verifying, increasing and maintaining are repeated until the cell reaches the programmed state.

摘要翻译： 一种用于对NROM单元进行编程的方法，其包括向单元施加漏极（VD），源极（VS）和栅极电压（VG）并验证单元的编程或未编程状态的步骤。 如果单元处于未编程状态，则该方法包括在增加步骤的至少一部分期间增加漏极电压并将栅极电压保持在恒定电平的步骤。 重复施加，验证，增加和维护的步骤，直到细胞达到编程状态。