摘要:
A liquid crystal device for an electro-optical device is provided, the liquid crystal device including a plurality of liquid crystal cells wherein data signals are supplied to the liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements (292). The liquid crystal device comprises a substrate (71, 86) having a pixel region and at least one driver region; a plurality of first lines and a plurality of second lines arranged in a matrix in the pixel region and connected to the field effect transistors; driving circuits (21, 12) formed in the at least one driver region and connected to one of the first lines and second lines, output terminals of driver circuits connected to one of said plurality of first lines and said plurality of second lines; and at least one driver test circuit (283; 288) comprising transistors, said transistors of said at least one driver test circuit (283; 288) being coupled to a test signal input terminal (284; 289), a test signal output terminal (285; 290) and one of said first and second lines, wherein test signals applied to the test signal input terminal (284; 289) are output to said test signal output terminal (285, 290) through said transistors in accordance with the operation of said driver circuit.
摘要:
An active matrix panel comprises a picture element matrix (22), which is mounted on a transparent substrate (71, 86) and which includes a plurality of gate lines (24, 25), a plurality of source lines (26, 27, 28) and a plurality of picture elements (32, 33). The active matrix panel further comprises a gate line drive circuit (21) and a source line drive circuit (12). Each of the picture elements includes a thin film transistor (29, 101) and, in addition, at least one of the gate line drive circuit and the source line drive circuit comprises a plurality of thin film transistors (47 to 56; 58, 59; 99, 100) provided on the transparent substrate. For example, the at least one of the gate line drive circuit and the source line drive circuit may comprise complementary thin film transistors. The thin film transistors of the picture element matrix have a similar cross sectional structure to at least certain of the thin film transistors of the at least one of the gate line drive circuit and the source line drive circuit.
摘要:
A liquid crystal device for an electro-optical device is provided, the liquid crystal device including a plurality of liquid crystal cells wherein data signals are supplied to the liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements (292). The liquid crystal device comprises a picture element matrix (240) including a plurality of source lines and a plurality of picture elements coupled to a plurality of source lines; and a source line driving circuit coupled to the picture element matrix (240) through the plurality of the source lines, the source line driving circuit comprising a plurality of signal buses (231, 232, 233) and a plurality of sample-hold circuits (234, 235, 236) coupled to the plurality of signal buses (231, 232, 233) through a plurality of connecting lines (237, 238, 239), wherein the distance between one of the signal buses and one of the sample-hold circuits is different from the distance between another one of the signal buses and another one of the sample-hold circuits, and the resistances of the connecting line for connecting the one of the signal buses to the one of the sample-hold circuits are substantially equal to the resistance of the connecting line for connecting another one of the signal buses to another one of sample-hold circuits.
摘要:
A liquid crystal device for an electro-optical device is provided, the liquid crystal device including a plurality of liquid crystal cells wherein data signals are supplied to the liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements. The liquid crystal device comprises a substrate (71, 86) having a pixel region and at least one driver region; driving means (161) formed in the at least one driver region for driving ssaid field effect transistors, the driving means (161) comprising at least a shift register (163) having CMOS thin film transistors and sample and hold circuits (166), the CMOS thin film transistors including first conductive type thin film transistors and second conductive type thin film transistors, and the sample and hold circuits (166) including at least first conductive type thin film transistors, the gate length of the first conductive type thin film transistors of CMOS thin film transistors being greater than the gate length of the first conductive type thin film transistors of the sample and hold circuits.
摘要:
An active matrix panel comprises a picture element matrix (22), which is mounted on a transparent substrate (71, 86) and which includes a plurality of gate lines (24, 25), a plurality of source lines (26, 27, 28) and a plurality of picture elements (32, 33). Each of the picture elements includes a thin film transistor (29, 101). The active matrix panel further includes a gate line drive circuit (21) and a source line drive circuit (12) at least one of the gate line drive circuit and the source line drive circuit comprises a plurality of complementary thin film transistors (47 to 56; 58, 59; 99, 100) provided on the transparent substrate, having a gate length shorter than that of the thin film transistors of the picture element matrix.
摘要:
An active matrix panel comprises a picture element matrix (22), which is mounted on a transparent substrate (71, 86) and which includes a plurality of gate lines (24, 25), a plurality of source lines (26, 27, 28) and a plurality of picture elements (32, 33). Each of the picture elements includes a thin film transistor (29, 101). The active matrix panel further includes a gate line drive circuit (21) and a source line drive circuit (12) at least one of the gate line drive circuit and the source line drive circuit comprises a plurality of complementary thin film transistors (47 to 56; 58, 59; 99, 100) provided on the transparent substrate, having a gate length shorter than that of the thin film transistors of the picture element matrix.
摘要:
A voltage regulator circuit for a liquid crystal display in which compensation for the temperature dependent nature of the operating characteristics of the display is achieved using integrated circuit components. This is achieved by utilising the temperature-dependent characteristics of a forward bias PN junction diode (323, 324), the number of diodes providing selection of the temperature gradient of the output voltage. The PN junction diode may be formed, effectively, by an NPN transistor 305 with its base and collector terminals common. Alternatively the temperature dependent element may be formed as an integrated resistor (362, 366). The entire circuit is made as an integrated circuit, preferably using MOS technology, and adjustment of the temperature gradient of the output voltage and the voltage level thereof are provided for by techniques compatible with integrated circuit structures. In one embodiment a non-volatile memory device (461, 462) is used to control a set of analogue switches (421-424; 451, 454) in series with respective integrated resistors (401, 404; 431, 434). The output voltage is stabilised by providing a standard voltage source within an operational amplifier, for example utilising the difference in the threshold voltage between two MOSFET, so that the output voltage is not affected by variations in the supply voltage. In order to reduce the power consumption to a minimum the operational amplifiers may be cyclically activated by a periodic clock signal and a sample and hold circuit (396, 397) is provided.
摘要:
A liquid crystal device for an electro-optical device is provided, the liquid crystal device including a plurality of liquid crystal cells wherein data signals are supplied to the liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements (292). The liquid crystal device comprises a substrate (71, 86) having a pixel region and at least one driver region; a plurality of first lines and a plurality of second lines arranged in a matrix in the pixel region and connected to the field effect transistors; driving circuits (21, 12) formed in the at least one driver region and connected to one of the first lines and second lines, output terminals of driver circuits connected to one of said plurality of first lines and said plurality of second lines; and at least one driver test circuit (283; 288) comprising transistors, said transistors of said at least one driver test circuit (283; 288) being coupled to a test signal input terminal (284; 289), a test signal output terminal (285; 290) and one of said first and second lines, wherein test signals applied to the test signal input terminal (284; 289) are output to said test signal output terminal (285, 290) through said transistors in accordance with the operation of said driver circuit.