摘要:
An electrical bus grid (108) for an application specific integrated circuit (ASIC) chip (102). The bus grid is generally formed by mutually orthogonal wires (28',30') contained within two metal layer (M6',M7'). The bus grid is located within each of a plurality of contiguous rectangular regions (32'), which are defined by electrical contacts (12'). Due to the regular pattern of the electrical contacts, the bus grids within the contiguous rectangular rgions are identical to one another, such that the bus grid forms a repeatable pattern. The widths of the wires in each of the two metal layers vary depending upon the magnitude of the current carried by the corresponding wire. The magnitude of the current in the power bus may be determined by simulation and modeling performed prior to placement of cells (e.g., 18, 20, 22) within the ASICchip.
摘要:
A multi-layer test pad on a semiconductor wafer, which includes an underlying matrix of interconnected first pads, which are arranged in rows and columns. The multi-layer test pad includes an oxide layer disposed above the underlying matrix and in between the rows and columns. The multi-layer test pad further includes an overlying matrix of interconnected second pads disposed above the oxide layer. Each of the second pads completely overlaps at least nine of the first pads, including four oxide regions surrounding a center first pad of the nine of the first pads. The nine of the first pads are arranged as 3 X 3 block of the first pads.
摘要:
A multi-layer test pad on a semiconductor wafer, which includes an underlying matrix of interconnected first pads, which are arranged in rows and columns. The multi-layer test pad includes an oxide layer disposed above the underlying matrix and in between the rows and columns. The multi-layer test pad further includes an overlying matrix of interconnected second pads disposed above the oxide layer. Each of the second pads completely overlaps at least nine of the first pads, including four oxide regions surrounding a center first pad of the nine of the first pads. The nine of the first pads are arranged as 3 X 3 block of the first pads.
摘要:
A liquid crystal device for an electro-optical device is provided, the liquid crystal device including a plurality of liquid crystal cells wherein data signals are supplied to the liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements (292). The liquid crystal device comprises a picture element matrix (240) including a plurality of source lines and a plurality of picture elements coupled to a plurality of source lines; and a source line driving circuit coupled to the picture element matrix (240) through the plurality of the source lines, the source line driving circuit comprising a plurality of signal buses (231, 232, 233) and a plurality of sample-hold circuits (234, 235, 236) coupled to the plurality of signal buses (231, 232, 233) through a plurality of connecting lines (237, 238, 239), wherein the distance between one of the signal buses and one of the sample-hold circuits is different from the distance between another one of the signal buses and another one of the sample-hold circuits, and the resistances of the connecting line for connecting the one of the signal buses to the one of the sample-hold circuits are substantially equal to the resistance of the connecting line for connecting another one of the signal buses to another one of sample-hold circuits.
摘要:
The described integrated circuit comprises 16 amplifying modules (A1,... ,A16), two resistive matrices (MR1, MR2) and a bias circuit (CP), which with four amplifying modules is placed along a first column separated by a resistive matrix from two adjacent columns of four amplifying modules each, in turn separated by the other resistive matrix from the last column of four amplifying modules, thereby implementating an active filter without external components
摘要:
A one-chip IC device has a plurality of IC-chip equivalent regions (21, 22) which have substantially the same patterns and functions as those of ICs whose functions are already evaluated and proven. The device has intra-region wiring layers in the IC-chip equivalent regions (21, 22). The device also has external lead contacts (23, 24) which have been used as bonding pads of the original ICs, in addition to outer bonding pads (25). Second wiring layers (26, 27) are connected between the external lead contacts (23, 24) and between the external lead contacts (23, 24) and the outer bonding pads (25).
摘要:
A masterslice semiconductor device has two kinds of basic cells; a first kind (BC1, BC2) having a size the same as that of ordinary basic cells in a previous masterslice semiconductor device and a second kind (BCL) having a size larger than that of the first kind. A number of the large sized basic cells are arranged in columns of a semiconductor substrate to constitute a plurality of basic cells arrays (BLL) which separated in the row direction of the semiconductor substrate. Each of the basic cell arrays (BLL) comprised of basic cells of the second kind (BCL) is situated between two adjacent basic cell arrays (BL,, BL 2 ) comprised of basic cells of the first kind (BC,, BC,). Each region occupied by a basic cell arrays (BLL) of basic cells of the second kind (BCL) can be used for distributing interconnecting lines as in the previous masterslice semiconductor device. At least one basic cell of the second kind (BCL) in each such region serves to interconnect basic cells of the first kind (BC 1 , BC 2 ) in adjacent basic cell arrays (BL,, BL 2 ) and also serves to constitute an elementary circuit block, a unit cell (UC), in conjunction with basic cells of the first kind.
摘要:
Un circuit controleur integre (18) est utilise pour connecter une unite de traitement centrale (21) par l'intermediaire d'une logique d'interface de bus (20) a une pluralite de dispositifs a distance en utilisant deux canaux de communication (1, 2) pour commander leur fonctionnement. Une memoire tampon de sortie (30) recoit des donnees sous forme parallele provenant de l'unite de traitement par ce bus et un registre d'emission serielle (40) transmet ces donnees sous forme serielle aux dispositifs a distance. Un registre de reception serielle (50) recoit les donnees serielles provenant des dispositifs a distance et un tampon d'entree (54) transmet ces donnees a l'unite de traitement sous forme parallele. Des circuits de commande de synchronisation (44, 46), des logiques de commande (36), un registre de mode (70), un registre d'etat (72) et un registre de commande (75) sont inclus dans le circuit controleur pour effectuer les diverses fonctions associees a celui-ci.