公开(公告)号：EP0989614A2

公开(公告)日：2000-03-29

申请号：EP99117347.7

申请日：1999-09-03

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Nakajima, Setsuo ,  Kuwabara, Hideaki

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78627 ,  H01L27/1237 ,  H01L27/1296 ,  H01L29/66765 ,  H01L29/78624 ,  H01L29/78678 ,  H01L29/78684

摘要： There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same.
In order to achieve the object, the design of a second mask is appropriately determined in accordance with requirements associated with the circuit configuration to make it possible to form a desired LDD region on both sides or one side of the channel formation region of a TFT.

摘要翻译： 提供一种半导体器件，其包括由具有高再现性的LDD结构的半导体元件形成的半导体电路，提高TFT的稳定性并提供高生产率及其制造方法。 为了实现该目的，根据与电路结构相关的要求适当地确定第二掩模的设计，使得可以在TFT的沟道形成区域的两侧或一侧上形成期望的LDD区域。