公开(公告)号：EP1564800A2

公开(公告)日：2005-08-17

申请号：EP05006907.9

申请日：1994-09-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Konuma, Toshimitsu ,  Sugawara, Akira ,  Uehara, Yukiko ,  Zhang, Hongyong ,  Suzuki, Atsunori ,  Ohnuma, Hideto ,  Yamaguchi, Naoaki ,  Suzawa, Hideomi ,  Uochi, Hideki ,  Takemura, Yasuhiko

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L29/45 ,  H01L29/786 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： TFT形成在绝缘基板的源极区域，漏极区域和沟道区域上，栅极绝缘膜至少形成在沟道区域上，栅极电极形成在栅极绝缘膜上。 在沟道区和漏极区之间，提供具有较高电阻率的区域以减小Ioff电流。 形成这种结构的方法包括以下步骤：阳极氧化栅电极以在栅电极侧形成多孔阳极氧化膜; 使用多孔阳极氧化膜作为掩模去除部分栅极绝缘层，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区。 之后，执行一个导电元件的离子掺杂。 高电阻率区域限定在栅极绝缘膜下方。

公开(公告)号：EP1564799A2

公开(公告)日：2005-08-17

申请号：EP05006906.1

申请日：1994-09-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Konuma, Toshimitsu ,  Sugawara, Akira ,  Uehara, Yukiko ,  Zhang, Hongyong ,  Suzuki, Atsunori ,  Ohnuma, Hideto ,  Yamaguchi, Naoaki ,  Suzawa, Hideomi ,  Uochi, Hideki ,  Takemura, Yasuhiko

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L29/786 ,  H01L29/45 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜作为掩模去除栅极绝缘的一部分，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域被定义在栅极绝缘膜下面。

公开(公告)号：EP0645802A2

公开(公告)日：1995-03-29

申请号：EP94306862.7

申请日：1994-09-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Konuma, Toshimitsu ,  Sugawara, Akira ,  Uehara, Yukiko ,  Zhang, Hongyong ,  Suzuki, Atsunori ,  Ohnuma, Hideto ,  Yamaguchi, Naoaki ,  Suzawa, Hideomi ,  Uochi, Hideki ,  Takemura, Yasuhiko

IPC分类号： H01L21/316 ,  H01L21/336

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an loff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode ; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜作为掩模去除栅极绝缘的一部分，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域被定义在栅极绝缘膜下面。

公开(公告)号：EP0322258B1

公开(公告)日：1993-05-05

申请号：EP88312326.7

申请日：1988-12-23

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shinohara, Hisato ,  Sugawara, Akira

IPC分类号： B41M5/24 ,  G02F1/13

CPC分类号： H05K3/027 ,  B23K26/066 ,  B41M5/24 ,  G02F1/13439 ,  H05K1/0306 ,  H05K3/38

公开(公告)号：EP0645802B1

公开(公告)日：2007-11-21

申请号：EP94306862.7

申请日：1994-09-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Konuma, Toshimitsu ,  Sugawara, Akira ,  Uehara, Yukiko ,  Zhang, Hongyong ,  Suzuki, Atsunori ,  Ohnuma, Hideto ,  Yamaguchi, Naoaki ,  Suzawa, Hideomi ,  Uochi, Hideki ,  Takemura, Yasuhiko

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L29/786 ,  H01L29/45

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

公开(公告)号：EP0645802A3

公开(公告)日：1998-03-11

申请号：EP94306862.7

申请日：1994-09-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Konuma, Toshimitsu ,  Sugawara, Akira ,  Uehara, Yukiko ,  Zhang, Hongyong ,  Suzuki, Atsunori ,  Ohnuma, Hideto ,  Yamaguchi, Naoaki ,  Suzawa, Hideomi ,  Uochi, Hideki ,  Takemura, Yasuhiko

IPC分类号： H01L21/316 ,  H01L21/336

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an loff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode ; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜作为掩模去除栅极绝缘的一部分，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域被定义在栅极绝缘膜下面。

公开(公告)号：EP0322258A3

公开(公告)日：1989-07-19

申请号：EP88312326.7

申请日：1988-12-23

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shinohara, Hisato ,  Sugawara, Akira

IPC分类号： B41M5/24 ,  G02F1/13

CPC分类号： H05K3/027 ,  B23K26/066 ,  B41M5/24 ,  G02F1/13439 ,  H05K1/0306 ,  H05K3/38

摘要： A conductive pattern is formed, by laser scribing, on a soda-lime glass substrate suitable for liquid crystal devices. Portions of an ITO film formed on the glass substrate are removed by projection of laser pulses. An excimer laser is employed to emit the laser beam pulses. The laser projection is effected so as not to eliminate an ion blocking film intervening between the ITO film and the glass substrate and made of non-doped silicon oxide which prevent alkali ions from escaping from the glass substrate.

公开(公告)号：EP1564800A3

公开(公告)日：2006-03-15

申请号：EP05006907.9

申请日：1994-09-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Konuma, Toshimitsu ,  Sugawara, Akira ,  Uehara, Yukiko ,  Zhang, Hongyong ,  Suzuki, Atsunori ,  Ohnuma, Hideto ,  Yamaguchi, Naoaki ,  Suzawa, Hideomi ,  Uochi, Hideki ,  Takemura, Yasuhiko

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L29/45 ,  H01L29/786 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜作为掩模去除栅极绝缘的一部分，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域被定义在栅极绝缘膜下面。

公开(公告)号：EP1564799A3

公开(公告)日：2005-12-28

申请号：EP05006906.1

申请日：1994-09-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Konuma, Toshimitsu ,  Sugawara, Akira ,  Uehara, Yukiko ,  Zhang, Hongyong ,  Suzuki, Atsunori ,  Ohnuma, Hideto ,  Yamaguchi, Naoaki ,  Suzawa, Hideomi ,  Uochi, Hideki ,  Takemura, Yasuhiko

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L29/786 ,  H01L29/45 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

公开(公告)号：EP0322258A2

公开(公告)日：1989-06-28

申请号：EP88312326.7

申请日：1988-12-23

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shinohara, Hisato ,  Sugawara, Akira

IPC分类号： B41M5/24 ,  G02F1/13

CPC分类号： H05K3/027 ,  B23K26/066 ,  B41M5/24 ,  G02F1/13439 ,  H05K1/0306 ,  H05K3/38

摘要： A conductive pattern is formed, by laser scribing, on a soda-lime glass substrate suitable for liquid crystal devices. Portions of an ITO film formed on the glass substrate are removed by projection of laser pulses. An excimer laser is employed to emit the laser beam pulses. The laser projection is effected so as not to eliminate an ion blocking film intervening between the ITO film and the glass substrate and made of non-doped silicon oxide which prevent alkali ions from escaping from the glass substrate.

摘要翻译： 通过激光划线在适用于液晶装置的钠钙玻璃基板上形成导电图案。 通过激光脉冲的投影去除在玻璃基板上形成的ITO膜的部分。 使用准分子激光器发射激光束脉冲。 实现激光投影，以便不消除介于ITO膜和玻璃基板之间并由非掺杂氧化硅制成的离子阻挡膜，该氧化硅防止碱离子从玻璃基板逸出。