公开(公告)号：EP0516847A1

公开(公告)日：1992-12-09

申请号：EP90908684.5

申请日：1990-06-01

申请人： SHIBATA, Tadashi

发明人： SHIBATA, Tadashi 19-1393, Aza-Koshizi ,  OHMI, Tadahiro 1-17-301, Komegabukuro 2-chome

IPC分类号： H01L29/788

CPC分类号： G06N3/0635 ,  H01L27/115 ,  H01L29/7881 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprising on a substrate a first semiconductor region of one conductive type, first source and and drain regions of the opposite conductive type formed in the above regions, a first gate electrode formed in a region separating said source and drain regions, the first gate electrode being electrically floated through an insulating film, and at least two second gate electrodes connected to said gate electrode by capacitive coupling, wherein an inverted layer is formed under said first gate electrode and said first source and drain regions are electrically connected together only when a predetermined threshold value is exceeded by an absolute value of a value obtained by linearly summing up the weighed voltages applied to the second gate electrodes.

摘要翻译： 一种半导体器件，在衬底上包括一个导电类型的第一半导体区域，形成在上述区域中的相反导电类型的第一源极和漏极区域，形成在分离所述源极和漏极区域的区域中的第一栅电极， 栅电极通过绝缘膜电浮动;以及至少两个第二栅电极，通过电容耦合连接到所述栅电极，其中在所述第一栅电极下方形成反向层，并且所述第一源极和漏极区仅当 通过对施加到第二栅电极的加权电压进行线性相加而获得的值的绝对值超过预定阈值。