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1.发明公开Method of diameter measurement used in automatically controlled crystal growth 失效Verfahren zur Durchmesserbestimmung bei automatisch kontrolliertem Kristallwachstum。
公开(公告)号：EP0450502A1
公开(公告)日：1991-10-09
申请号：EP91104946.8
申请日：1991-03-28
发明人： Baba, Masahiko , Ohtsuna, Hiroshi
摘要： Disclosed are a method of and a device for crystal diameter measurement in an apparatus for automatically controlling single crystal growth by the CZ technique. In the diameter measurement method, a growing region of a single crystal 32 is photographed by a camera 38, and an outer diameter D O of an luminous ring image 70 having a luminance above a reference value E is detected from a video signal supplied from the camera 38, the diameter D₀ thus detected being used for crystal diameter control. The crystal diameter measuring device comprises: a camera 38 for photographing a growing section of a single crystal 32 and supplying a video signal; devices for detecting a maximum video signal value with respect to one scanning line or more; a device for obtaining a reference value E corresponding to the above-mentioned maximum value; devices for binary-coding the video signal in comparison with the reference value E; and a device for detecting the outer diameter D₀ of a luminous image from a binary image obtained by the binary-coding.
摘要翻译： 公开了用于通过CZ技术自动控制单晶生长的装置中的晶体直径测量的方法和装置。 在直径测量方法中，通过照相机38拍摄单晶32的生长区域，并且从照相机提供的视频信号中检测具有高于基准值E的亮度的发光环图像70的外径DO 如图38所示，这样检测的直径D0用于晶体直径控制。 晶体直径测量装置包括：摄像机38，用于拍摄单晶32的生长部分并提供视频信号; 用于检测相对于一条扫描线以上的最大视频信号值的装置; 用于获得与上述最大值对应的参考值E的装置; 与参考值E相比用于对视频信号进行二进制编码的装置; 以及用于通过二进制编码获得的二进制图像来检测发光图像的外径D0的装置。
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2.发明公开Silicon single crystal growth control apparatus and method forming and using a temperature pattern of heater 失效一种用于形成加热温度和设备用于生长使用这种模式硅单晶的图案的方法。
公开(公告)号：EP0429839A1
公开(公告)日：1991-06-05
申请号：EP90120049.3
申请日：1990-10-19
发明人： Araki, Kenji , Meada, Akiho , Baba, Masahiko
CPC分类号： C30B29/06 , C30B15/14 , C30B15/26 , Y10T117/1008
摘要： Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired squality, the diameter of the Si single crystal is4controlled by controlling the pull-up speed of the Si single crystal, the sum of a reference temperature set value T B (X), which is a function of a pull-up distance X of the Si single crystal from a certain growth point, and a value proportional to a diameter deviation ΔD is regarded as a reference temperature, and electric power supplied to a heater (24) for heating the Si molten liquid is controlled so that the temperature of the vicinity of the heater is equal to the reference temperature. In order to easily and quickly set the temperature pattern, various operational data in producing a Si single crystal is automatically collected and stored in a magnetic memory disk (82) corresponding to quality data of the Si single crystals which have been produced, data similar to the quality of a Si single crystal to be produced is retrieved from the stored data, an operator selects the most similar data, the selected operational data is displayed in a display unit (80), and the operator sets the reference temperature pattern T B (X) on a screen of the display unit by using a mouse (78).
摘要翻译： 用于在装置用于通过使用提拉法从硅熔融液35提拉硅单晶36向上。 为了生产具有所需squality Si单晶，通过控制Si单晶的上拉速度，基准温度设定值TB（X）的总和is4controlled的Si单晶的直径，在所有这是一个 从一定的增长点在Si单晶，和一个值正比于直径偏差DELTA D的上拉距离X的函数被视为一个基准温度，并提供给一个加热器（24）的电力，用于加热所述Si 熔化的液体被控制做了加热器附近的温度为等于参考温度。 为了容易且迅速地设定的温度的模式，在生产Si单晶的各种操作数据被自动收集并存储在磁存储盘（82）相应于已生产出的Si单结晶的质量的数据，类似于数据 Si单晶的待产生从所存储的数据中检索到操作者的质量选择最类似的数据，所选择的操作数据显示在显示单元（80），和操作者设定的基准温度TB图案（X ）所述显示单元的通过使用鼠标（78）在屏幕上。
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公开(公告)号：EP0472907B1
公开(公告)日：1995-09-20
申请号：EP91112379.2
申请日：1991-07-24
发明人： Baba, Masahiko , Ibe, Hiroyuki
CPC分类号： G01B11/10
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公开(公告)号：EP0472907A3
公开(公告)日：1993-01-20
申请号：EP91112379.2
申请日：1991-07-24
发明人： Baba, Masahiko , Ibe, Hiroyuki
CPC分类号： G01B11/10
摘要： A device for measuring the diameter of the growing portions of the single crystals grown by the Czochalski technique is provided. This device is capable of measuring the crystal diameter with a high degree of accuracy over a wide range from the small-diameter portion thereof to the large diameter portion. A one-dimensional camera 28 and a two-dimensional camera 48 are fixed to a shoulder chamber 34 in such a manner that the optical axes thereof are parallel to each other. An optical path switch-over device, consisting of a cylinder 56, a movable plane mirror 52 mounted on a cylinder rod, and a fixed plane mirror 54, is provided. When the diameter of a neck portion of the single crystal 20 having a diameter of 10 mm or less is measured, the light reflected by the plane mirrors 52 and 54 is made incident on the two-dimensional camera 48, and the diameter of a bright ring 27 is measured on the basis of the image obtained by the two-dimensional camera. To measure the diameter of the conical and cylindrical portions 24 and 26 having a diameter of 10 mm or more, an image of a line lying across the bright ring 27 is obtained by the one-dimensional camera 28 by retracting the plane mirror 52, and the diameter of the bright ring 27 is measured on the basis of the position where this line crosses the bright ring. When the two-dimensional camera 48 is switched over to the one-dimensional camera 28, the diameter measured using the one-dimensional camera 28 is corrected such that it coincides with the diameter measured using the two-dimensional camera 48.
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公开(公告)号：EP0265805A3
公开(公告)日：1991-01-16
申请号：EP87115232.8
申请日：1987-10-17
CPC分类号： G01B11/08 , Y10T117/1004 , Y10T117/1012
摘要： An apparatus for measuring the diameter of a crystal in which an optical sensor scans along a sensing line which crosses at one point a luminous ring formed at the interface between a crystalline rod and a melt; the picture element position corresponding to a maximum luminance is discriminated when the optical sensor scans; the mean value of the picture element position is calculated over at least one revolution of the crystalline rod; and the diameter D of the crystalline rod at a portion thereof interfacing with the melt is calculated from the mean value and the level of the melt. Similarly, the minimum crystal diameter can be calculated by obtaining the picture element position corresponding to the minimum crystal diameter instead of obtaining the mean of the picture element position.
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公开(公告)号：EP0265805A2
公开(公告)日：1988-05-04
申请号：EP87115232.8
申请日：1987-10-17
CPC分类号： G01B11/08 , Y10T117/1004 , Y10T117/1012
摘要： An apparatus for measuring the diameter of a crystal in which an optical sensor scans along a sensing line which crosses at one point a luminous ring formed at the interface between a crystalline rod and a melt; the picture element position corresponding to a maximum luminance is discriminated when the optical sensor scans; the mean value of the picture element position is calculated over at least one revolution of the crystalline rod; and the diameter D of the crystalline rod at a portion thereof interfacing with the melt is calculated from the mean value and the level of the melt. Similarly, the minimum crystal diameter can be calculated by obtaining the picture element position corresponding to the minimum crystal diameter instead of obtaining the mean of the picture element position.
摘要翻译： 一种用于测量晶体直径的装置，其中光学传感器沿着与形成在结晶棒和熔体之间的界面处形成的发光环的一个点处的感测线扫描; 当光学传感器扫描时，判别对应于最大亮度的像素位置; 在结晶棒的至少一圈上计算像素位置的平均值; 并且根据熔体的平均值和水平计算结晶棒在与熔体相接合的部分的直径D。 类似地，可以通过获得与最小晶体直径相对应的像素位置而不是获得像素位置的平均值来计算最小晶体直径。
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公开(公告)号：EP0498653B1
公开(公告)日：1996-05-01
申请号：EP92301018.5
申请日：1992-02-06
CPC分类号： G01G9/00 , C30B15/28 , G01B11/105 , Y10T117/1004
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公开(公告)号：EP0428415B1
公开(公告)日：1995-05-17
申请号：EP90312541.7
申请日：1990-11-16
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1008 , Y10T117/1032
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9.发明授权Method of automatic control of growing neck portion of a single crystal by the CZ method 失效为通过切克劳斯基法的单晶的颈部的育种的自动控制的方法。
公开(公告)号：EP0444628B1
公开(公告)日：1994-10-12
申请号：EP91102879.3
申请日：1991-02-27
发明人： Baba, Masahiko , Ohtsuna, Hiroshi
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , Y10T117/1008
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公开(公告)号：EP0498653A3
公开(公告)日：1993-09-01
申请号：EP92301018.5
申请日：1992-02-06
CPC分类号： G01G9/00 , C30B15/28 , G01B11/105 , Y10T117/1004
摘要： A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising:
calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.
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