公开(公告)号：EP0503666B1

公开(公告)日：1995-12-27

申请号：EP92104400.4

申请日：1992-03-13

申请人： SONY CORPORATION

发明人： Kusaka, Takahisa ,  Kanbe, Hideo ,  Izumi, Akio ,  Abe, Hideshi ,  Ohashi, Masanori ,  Asai, Atsuhi Sony Corporation

IPC分类号： H01L27/148 ,  H01L31/028 ,  H01L31/103

CPC分类号： H01L31/103 ,  H01L27/14831 ,  H01L31/0288 ,  Y02E10/50 ,  Y10S438/909

公开(公告)号：EP0503666A2

公开(公告)日：1992-09-16

申请号：EP92104400.4

申请日：1992-03-13

申请人： SONY CORPORATION

发明人： Kusaka, Takahisa ,  Kanbe, Hideo ,  Izumi, Akio ,  Abe, Hideshi ,  Ohashi, Masanori ,  Asai, Atsuhi Sony Corporation

IPC分类号： H01L27/148 ,  H01L31/028 ,  H01L31/103

CPC分类号： H01L31/103 ,  H01L27/14831 ,  H01L31/0288 ,  Y02E10/50 ,  Y10S438/909

摘要： A CCD solid state image sensing device (A) is described in which a photosensitive section is constructed by a photodiode formed by a PN-junction between a first P-type well region (2) and an N-type impurity diffusion region (3) formed on an N-type silicon substrate (1). The N-type impurity diffusion region (3) is formed by ion implantation of a single substance of arsenic (As). With this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with known image sensing screens, can be reduced. The n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing this CCD solid state image sensing device also is disclosed.

摘要翻译： 描述了一种CCD固态图像感测装置（A），其中感光部分由由第一P型阱区域（2）和N型杂质扩散区域（3）之间的PN结形成的光电二极管构成， 形成在N型硅衬底（1）上。 通过离子注入砷（As）的单一物质形成N型杂质扩散区（3）。 利用该CCD固态图像感测装置，可以减少图像感测屏幕上的明亮缺陷，这是已知的图像感测屏幕遇到的缺陷之一。 构成PN结的n型杂质扩散区的尺寸可以减小，并且可以使CCD固态图像感测装置本身尺寸更小。 此外，还公开了制造该CCD固体摄像装置的方法。

公开(公告)号：EP0503666A3

公开(公告)日：1992-10-21

申请号：EP92104400.4

申请日：1992-03-13

申请人： SONY CORPORATION

发明人： Kusaka, Takahisa ,  Kanbe, Hideo ,  Izumi, Akio ,  Abe, Hideshi ,  Ohashi, Masanori ,  Asai, Atsuhi Sony Corporation

IPC分类号： H01L27/148 ,  H01L31/028 ,  H01L31/103

CPC分类号： H01L31/103 ,  H01L27/14831 ,  H01L31/0288 ,  Y02E10/50 ,  Y10S438/909

摘要： A CCD solid state image sensing device (A) is described in which a photosensitive section is constructed by a photodiode formed by a PN-junction between a first P-type well region (2) and an N-type impurity diffusion region (3) formed on an N-type silicon substrate (1). The N-type impurity diffusion region (3) is formed by ion implantation of a single substance of arsenic (As). With this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with known image sensing screens, can be reduced. The n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing this CCD solid state image sensing device also is disclosed.