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公开(公告)号：EP3892754A1
公开(公告)日：2021-10-13
申请号：EP21159617.6
申请日：2021-02-26
发明人： Haymore, Scott , Wilby, Tony , Thomas, Adrian , Hyndman, Rhonda , Burgess, Steve
摘要： According to the present invention there is provided a method of sputter depositing a metallic layer on a substrate in the fabrication of a resonator device, wherein the metallic layer is composed of a metal selected from molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), platinum (Pt) or ruthenium (Ru), the method comprising the steps of:
providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less;
supporting the substrate on the substrate support;
performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm 2 , and the substrate has a temperature in the range of 200-600 °C.-
公开(公告)号：EP4174208A1
公开(公告)日：2023-05-03
申请号：EP22197805.9
申请日：2022-09-26
发明人： Wilby, Tony , Burgess, Stephen , Thomas, Adrian , Haymore, Scott
摘要： According to the present invention there is provided a method of depositing a deposition material into a plurality of recesses formed in a substrate by Physical Vapour Deposition (PVD) comprising the steps of:
positioning the substrate on a substrate supporting upper surface of a substrate support, wherein an arrangement of permanent magnets is positioned beneath the substrate supporting upper surface so that permanent magnets are disposed underneath the substrate; and
depositing the deposition material into the recesses formed in the substrate by sputtering a sputtering material from a target of a magnetron device;
in which, during the step of depositing the deposition material, the arrangement of permanent magnets provides a substantially uniform lateral magnetic field across the surface of the substrate which extends into a region beyond a periphery of the substrate to enhance resputtering of deposited material deposited into the recesses.-
公开(公告)号：EP4207245A1
公开(公告)日：2023-07-05
申请号：EP22189138.5
申请日：2022-08-05
发明人： Haymore, Scott , Wilby, Tony , Burgess, Stephen
摘要： According to the invention there is provided a method of operating a PVD apparatus in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate comprising the steps of:
positioning the semiconductor substrate with the electrically conductive feature formed thereon on a substrate support in a chamber of the PVD apparatus;
deploying a shutter within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned; and
simultaneously generating a first plasma in the first compartment to remove material from the electrically conductive feature and a second plasma in the second compartment to clean the target.-
公开(公告)号：EP3971318A1
公开(公告)日：2022-03-23
申请号：EP21191939.4
申请日：2021-08-18
发明人： Haymore, Scott , Thomas, Adrian , Wilby, Tony
摘要： According to the present invention there is provided a method of sputter depositing from a target an additive-containing aluminium nitride film containing an additive element selected from: scandium (Sc), yttrium (Y), titanium (Ti), chromium (Cr), magnesium (Mg) and hafnium (Hf), the method comprising the steps of:
providing a semiconductor substrate having a metallic layer thereon in a chamber; and
depositing the additive-containing aluminium nitride film onto the metallic layer by pulsed DC reactive sputtering of the target;
wherein the step of depositing the additive-containing aluminium nitride film comprises introducing a gaseous mixture comprising nitrogen gas and an inert gas into the chamber at a flow rate in sccm, in which the flow rate of the gaseous mixture in sccm comprises a nitrogen gas flow rate in sccm, and in which the nitrogen gas flow rate in sccm is less than or equal to about 50% of the flow rate of the gaseous mixture in sccm and also is sufficient to fully poison the target.
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