-
1.发明授权MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE FABRICATED FROM SILICON CARBIDE AND METHOD FOR FABRICATING THE SAME 有权MONOLITHIC垂直障场效应晶体管和由碳化硅生产的肖特基势垒二极管及其制造方法
公开(公告)号：EP1779435B8
公开(公告)日：2012-03-07
申请号：EP05858028.3
申请日：2005-07-08
IPC分类号： H01L27/08 , H01L21/82 , H01L29/15 , H01L27/098 , H01L27/06
CPC分类号： H01L29/872 , H01L27/0641 , H01L27/0814 , H01L27/098 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8083
摘要： A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
-
2.发明授权NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS 有权常闭JFET集成电路与BIG BAND，半导体距离
公开(公告)号：EP1829113B1
公开(公告)日：2012-12-26
申请号：EP05849440.2
申请日：2005-11-30
申请人： SS SC IP, LLC
发明人： SANKIN, Igor , MERRETT, Joseph, N.
IPC分类号： H01L29/76
CPC分类号： H03K17/567 , H01L27/098 , H01L29/1608 , H01L29/2003 , H01L29/808 , H01L29/8083 , H01L29/8086 , H01L29/861 , H01L29/868 , H01L29/872
-
3.发明公开MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE FABRICATED FROM SILICON CARBIDE AND METHOD FOR FABRICATING THE SAME 有权MONOLITHIC垂直障场效应晶体管和由碳化硅生产的肖特基势垒二极管及其制造方法
公开(公告)号：EP1779435A2
公开(公告)日：2007-05-02
申请号：EP05858028.3
申请日：2005-07-08
IPC分类号： H01L29/15
CPC分类号： H01L29/872 , H01L27/0641 , H01L27/0814 , H01L27/098 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8083
摘要： A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
-
4.发明授权MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE FABRICATED FROM SILICON CARBIDE AND METHOD FOR FABRICATING THE SAME 有权MONOLITHIC垂直障场效应晶体管和由碳化硅生产的肖特基势垒二极管及其制造方法
公开(公告)号：EP1779435B1
公开(公告)日：2011-12-07
申请号：EP05858028.3
申请日：2005-07-08
IPC分类号： H01L27/08 , H01L21/82 , H01L29/15 , H01L27/098 , H01L27/06
CPC分类号： H01L29/872 , H01L27/0641 , H01L27/0814 , H01L27/098 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8083
摘要： A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
-
-
-
搜索结果
4 条记录 (耗时 0.011 秒)
