-
1.发明公开MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE FABRICATED FROM SILICON CARBIDE AND METHOD FOR FABRICATING THE SAME 有权MONOLITHIC垂直障场效应晶体管和由碳化硅生产的肖特基势垒二极管及其制造方法
公开(公告)号：EP1779435A2
公开(公告)日：2007-05-02
申请号：EP05858028.3
申请日：2005-07-08
IPC分类号： H01L29/15
CPC分类号： H01L29/872 , H01L27/0641 , H01L27/0814 , H01L27/098 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8083
摘要： A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
-
2.发明授权MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE FABRICATED FROM SILICON CARBIDE AND METHOD FOR FABRICATING THE SAME 有权MONOLITHIC垂直障场效应晶体管和由碳化硅生产的肖特基势垒二极管及其制造方法
公开(公告)号：EP1779435B1
公开(公告)日：2011-12-07
申请号：EP05858028.3
申请日：2005-07-08
IPC分类号： H01L27/08 , H01L21/82 , H01L29/15 , H01L27/098 , H01L27/06
CPC分类号： H01L29/872 , H01L27/0641 , H01L27/0814 , H01L27/098 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8083
摘要： A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
-
3.发明授权MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE FABRICATED FROM SILICON CARBIDE AND METHOD FOR FABRICATING THE SAME 有权MONOLITHIC垂直障场效应晶体管和由碳化硅生产的肖特基势垒二极管及其制造方法
公开(公告)号：EP1779435B8
公开(公告)日：2012-03-07
申请号：EP05858028.3
申请日：2005-07-08
IPC分类号： H01L27/08 , H01L21/82 , H01L29/15 , H01L27/098 , H01L27/06
CPC分类号： H01L29/872 , H01L27/0641 , H01L27/0814 , H01L27/098 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8083
摘要： A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
-
4.发明公开NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING 有权常闭JFET集成电路与BIG BAND，半导体距离
公开(公告)号：EP1829113A2
公开(公告)日：2007-09-05
申请号：EP05849440.2
申请日：2005-11-30
发明人： SANKIN, Igor , MERRETT, Joseph, N.
IPC分类号： H01L29/76
CPC分类号： H03K17/567 , H01L27/098 , H01L29/1608 , H01L29/2003 , H01L29/808 , H01L29/8083 , H01L29/8086 , H01L29/861 , H01L29/868 , H01L29/872
摘要： Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
-
-
-
搜索结果
4 条记录 (耗时 0.012 秒)
