公开(公告)号：EP4557616A1

公开(公告)日：2025-05-21

申请号：EP24212291.9

申请日：2024-11-12

Applicant: STMicroelectronics International N.V.

Inventor： MESSINA, Sebastiano ,  MITA, Salvatore ,  AIELLO, Natale

IPC: H03K17/041 ,  H03K17/16

Abstract: A half bridge circuit includes two GaN high electron mobility transistors (HEMT). A driver circuit generates a high side and low side driver signals corresponding to square wave. A driver deadtime is the period between during which both driver signals are low. A half bridge adjustment circuit is coupled between the driver and the half bridge circuit and generates a modified high side driver signal and a modified low side driver signal, each including a transition from a low voltage to an intermediate voltage during the corresponding deadtime and a transition from the intermediate voltage to a high voltage at an end of the corresponding deadtime. The half bridge adjustment circuit drives the gate terminals of the high side and low side transistors with the modified high side and low side driver signals.