公开(公告)号：EP4113581A1

公开(公告)日：2023-01-04

申请号：EP22181471.8

申请日：2022-06-28

Applicant: STMicroelectronics S.r.l.

Inventor： BADALA', Paolo ,  BASSI, Anna ,  BOSCAGLIA, Massimo ,  SCUDERI, Valentina ,  FRANCO, Giovanni

IPC: H01L21/28 ,  H01L21/268 ,  H01L29/417 ,  H01L21/336 ,  H01L21/329 ,  H01L29/78 ,  H01L29/872 ,  H01L29/16 ,  H01L29/06

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a metal layer (20) is deposited on a wafer (5) that has silicon carbide, wherein the metal layer forms a contact face (22). Laser annealing the contact face (22) with a laser beam (33) causes the metal layer to react with the wafer, forming a silicide layer (50). The laser beam has a footprint (35) having a size (L p,X , L p,Y , W X , W Y ). To laser anneal the contact face, a first portion (47) of the contact face is irradiated, the footprint (35) of the laser beam is moved by a step (D X , D Y ) smaller than the size of the footprint, and a second portion (48, 49) of the contact face is irradiated, thereby causing the first portion and the second portion of the contact face to overlap.

公开(公告)号：EP3896719A1

公开(公告)日：2021-10-20

申请号：EP21167866.9

申请日：2021-04-12

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna ,  BELLOCCHI, Gabriele

IPC: H01L21/28 ,  H01L29/45 ,  H01L21/268 ,  H01L21/265 ,  H01L21/329 ,  H01L29/872 ,  H01L29/16

Abstract: A method for manufacturing a SiC-based electronic device (50), comprising the steps of: implanting, at a front side (52a) of a solid body (52) of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region (59') that extends in depth in the solid body starting from the front side (52a) and has a top surface co-planar with said front side (52a); and generating a laser beam (82) directed towards the implanted region (59') in order to generate heating of the implanted region (59') at temperatures comprised between 1500°C and 2600°C so as to form an ohmic contact region (59") including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region (59') and, simultaneously, activation of the dopant species of P type.

公开(公告)号：EP3098859A1

公开(公告)日：2016-11-30

申请号：EP15200618.5

申请日：2015-12-16

Applicant: STMicroelectronics S.r.l.

Inventor： MAZZILLO, Massimo Cataldo ,  SCIUTO, Antonella ,  BADALA', Paolo

IPC: H01L31/101 ,  H01L31/18

CPC classification number: G01J1/429 ,  H01L27/14621 ,  H01L27/14683 ,  H01L31/1013 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation, including: a cathode region (6, 8) formed by a semiconductor material with a first type of conductivity; and a first anode region (10; 410; 510) and a second anode region (12; 412; 512), which are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor (32). The cathode region and the second anode region form a second sensor (34). In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

Abstract translation: 一种用于检测紫外线辐射的组成的集成电子装置，包括：由具有第一类导电性的半导体材料形成的阴极区（6,8） 以及第一阳极区域（10; 410; 510）和第二阳极区域（12; 412; 512），其相对于彼此横向交错并且被设置为与阴极区域接触。 阴极区域和第一阳极区域形成第一传感器（32）。 阴极区域和第二阳极区域形成第二传感器（34）。 在由UVA波段和UVB波段形成的光谱范围内，第一和第二传感器分别具有彼此不同的第一光谱响应度和第二光谱响应度。

公开(公告)号：EP4322229A2

公开(公告)日：2024-02-14

申请号：EP23220528.6

申请日：2021-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  BADALA', Paolo ,  CRUPI, Isodiana

IPC: H01L31/105

Abstract: A device (50) for detecting UV radiation, comprising: a SiC substrate (53) having an N doping; a SiC drift layer (52) having an N doping, which extends over the substrate (53); a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region (59) having a P doping, which extends in the drift layer (52); and an ohmic-contact region (60) including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region (59). The ohmic-contact region (60) is transparent to the UV radiation to be detected.

公开(公告)号：EP4246553A1

公开(公告)日：2023-09-20

申请号：EP23160409.1

申请日：2023-03-07

Applicant: STMicroelectronics S.r.l.

Inventor： BELLOCCHI, Gabriele ,  RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna

IPC: H01L21/20

Abstract: Process for manufacturing a 3C-SiC layer (4; 24), comprising the steps of: providing a wafer (1; 21) of 4H-SiC, provided with a surface (1a; 21a); heating, through a LASER beam (102), a selective portion of the wafer (1; 21) at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C-SiC layer (4; 24), a Silicon layer (6a; 26a) on the 3C-SiC layer and a carbon-rich layer (6b; 26b) above the Silicon layer (6a; 26a); completely removing the carbon-rich layer (6; 26) and the Silicon layer (6a; 26a), exposing the 3C-SiC layer (4; 24). If the Silicon layer (6a; 26a) is maintained on the 4H-SiC wafer, the process leads to the formation of a Silicon layer on the 4H-SiC wafer.
The 3C-SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

公开(公告)号：EP3930010A1

公开(公告)日：2021-12-29

申请号：EP21180942.1

申请日：2021-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  BADALA', Paolo ,  CRUPI, Isodiana

IPC: H01L31/0224 ,  H01L31/105 ,  H01L31/18

Abstract: A device (50) for detecting UV radiation, comprising: a SiC substrate (53) having an N doping; a SiC drift layer (52) having an N doping, which extends over the substrate (53); a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region (59) having a P doping, which extends in the drift layer (52); and an ohmic-contact region (60) including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region (59). The ohmic-contact region (60) is transparent to the UV radiation to be detected.

公开(公告)号：EP3098859B1

公开(公告)日：2018-02-07

申请号：EP15200618.5

申请日：2015-12-16

Applicant: STMicroelectronics S.r.l.

Inventor： MAZZILLO, Massimo Cataldo ,  SCIUTO, Antonella ,  BADALA', Paolo

IPC: H01L31/101 ,  H01L31/18

CPC classification number: G01J1/429 ,  H01L27/14621 ,  H01L27/14683 ,  H01L31/1013 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation, including: a cathode region (6, 8) formed by a semiconductor material with a first type of conductivity; and a first anode region (10; 410; 510) and a second anode region (12; 412; 512), which are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor (32). The cathode region and the second anode region form a second sensor (34). In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

公开(公告)号：EP4322229A3

公开(公告)日：2024-05-22

申请号：EP23220528.6

申请日：2021-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  BADALA', Paolo ,  CRUPI, Isodiana

IPC: H01L31/0224 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L21/0485 ,  H01L31/1864 ,  H01L31/105 ,  H01L31/022408 ,  Y02P70/50

Abstract: A device (50) for detecting UV radiation, comprising: a SiC substrate (53) having an N doping; a SiC drift layer (52) having an N doping, which extends over the substrate (53); a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region (59) having a P doping, which extends in the drift layer (52); and an ohmic-contact region (60) including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region (59). The ohmic-contact region (60) is transparent to the UV radiation to be detected.

公开(公告)号：EP4220687A1

公开(公告)日：2023-08-02

申请号：EP23152626.0

申请日：2023-01-20

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  GRECO, Giuseppe ,  BADALA', Paolo ,  ROCCAFORTE, Fabrizio ,  SPERA, Monia

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/335 ,  H01L29/778 ,  H01L21/027 ,  H01L29/20 ,  H01L29/417

Abstract: For manufacturing a HEMT device (1), a conductive region (15, 16) is formed on a work body (50) having a semiconductive heterostructure (8). To obtain the conductive region, a first reaction region (66) having carbon is formed on the heterostructure; and a metal stack (70) is formed having a second reaction region (70A) in contact with the first reaction region. The work body is annealed, so that the first reaction region (66) reacts with the second reaction region (70A), thus forming an interface portion (25) of the conductive region. The interface portion is of a compound having carbon and is in ohmic contact with the semiconductive heterostructure.

公开(公告)号：EP3876263A1

公开(公告)日：2021-09-08

申请号：EP21161040.7

申请日：2021-03-05

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna ,  SAGGIO, Mario Giuseppe ,  FRANCO, Giovanni

IPC: H01L21/04 ,  H01L29/66

Abstract: Method for manufacturing an electronic device (50) based on SiC, comprising the steps of: arranging a substrate (53) of SiC; forming a structural layer (52) of SiC on a front of the substrate; forming, in the structural layer (52), active regions of said electronic device (50), said active regions having a role in the generation and/or conduction of electric current during the use of the electronic device (50); forming, on the structural layer (52), a first electric terminal (58); forming an intermediate layer (72) of Titanium at the back of the substrate; heating the intermediate layer (72) by means of a LASER beam (82) in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds; and forming, on the intermediate layer, a second electric terminal (57) of the electronic device.