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    Method of fabrication a non-volatile semiconductor memory device with shielded single polysilicon gate memory part
    2.
    发明公开
    Method of fabrication a non-volatile semiconductor memory device with shielded single polysilicon gate memory part 失效
    制造非易失性半导体存储装置的方法与屏蔽Einpolysiliziumgate存储部

    公开(公告)号：EP0889520A1

    公开(公告)日：1999-01-07

    申请号：EP97830334.5

    申请日：1997-07-03

    申请人： STMicroelectronics S.r.l.

    发明人： Bottini, Roberta ,  Dalla Libera, Giovanna ,  Vajana, Bruno ,  Pio, Federico

    IPC分类号： H01L21/8247 ,  H01L27/115

    CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11558

    摘要： Process for manufacturing a semiconductor memory device comprising the formation, in a same semiconductor material chip, of at least a first memory cell (18) comprising a MOS transistor (19) with a first gate electrode (21) and a second gate electrode (23) superimposed and respectively formed by definition in a first (12) and a second layer (17) of conductive material, and of at least a second memory cell (1) shielded by a layer (32) of shielding material for preventing the information stored in the second memory cell (1) from being accessible from the outside, said second memory cell (1) comprising a MOS transistor (2) with a floating gate electrode (4) formed simultaneously with the first gate electrode (21) of the first cell (18) by definition of said first layer of conductive material (12). Said layer of shielding material (32) is formed by definition of said second layer of conductive material (17).

    摘要翻译： 处理用于制造半导体存储器件，包括形成，在相同的半导体材料芯片，至少一个第一存储单元（18）包括具有第一栅电极（21）和第二栅电极的MOS晶体管（19）（23 ）屏蔽材料用于防止存储的信息的叠加并分别在第一（12根据定义形成的）和导电材料的第二层（17），以及至少一个第二存储单元的（1由一个层（32屏蔽）） 在从外部被访问的第二存储单元（1），所述第二存储器单元（1），其包含（2）与浮置栅电极（4）与所述第一的第一栅电极（21）同时形成的MOS晶体管 细胞（18）通过所述第一导电材料（12）的层的定义。 屏蔽材料（32）的所述层是通过导电材料（17）的所述第二层的定义形成。