摘要:
A method for testing a memory device (100) comprising an arrangement of a plurality of memory elements (104) is proposed. The method comprises a step for defining a first and a second scanning sequences for scanning the memory elements and a step for defining at least one test datum ({XX}). The method further includes the performance of at least once a succession of operations including: a) writing the test datum into the plurality of memory elements, accessing thereto according to the first scanning sequence; b) accessing each memory element according to the first scanning sequence, reading a content thereof and comparing the read content to the test datum, and writing thereinto a complement of said test datum; c) accessing each memory element according to the second scanning sequence, reading a content thereof and comparing the read content to the complement of the test datum, and writing thereinto said test datum; d) accessing each memory element according to the second scanning sequence, reading a content thereof and comparing the read content to the test datum, writing thereinto said complement of the test datum, and reading again the content thereof and comparing the read content to the complement of the test datum.
摘要:
A built-in self-test (BIST) circuit adapted to be embedded in an integrated circuit ( 101 ) for testing the integrated circuit, including in particular a collection of addressable elements, for example a semiconductor memory. The BIST circuit comprises a general-purpose data processor ( 105 ) programmable for executing a test program for testing the integrated circuit. The BIST circuit comprises an accelerator circuit ( 113 ) cooperating with the general-purpose data processor for autonomously conducting operations on the integrated circuit according to the test program. The accelerator circuit comprises configuration means ( 201,203,233,301,303,501 ) adapted to be loaded with configuration parameters for adapting the accelerator circuit to the specific type of integrated circuit and the specific type of test program. ( FIG. 1 )
摘要:
An error correction device is provided. Such error correction device makes use of an error correction code defined by a parity matrix specialized for the application to multilevel memories. Particularly, the parity matrix is characterized by having a Maximum Row Weight equal to 21.
摘要:
An error correction device is provided. Such error correction device makes use of an error correction code defined by a parity matrix specialized for the application to multilevel memories. Particularly, the parity matrix is characterized by having a Maximum Row Weight equal to 22.