公开(公告)号：EP4258362A1

公开(公告)日：2023-10-11

申请号：EP23166943.3

申请日：2023-04-06

Applicant: STMicroelectronics S.r.l.

Inventor： AMARA, Sebastiano ,  MENTA, Fernando Giovanni ,  PISANO, Salvatore

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/36 ,  H01L21/331 ,  H01L21/265 ,  H01L21/683 ,  H01L29/423

Abstract: For manufacturing a vertical-channel semiconductor device (50), starting from a work wafer (1, 6) having a first side (1A) and a second side (1B) opposite to the first side along a direction (Z), a first doped region (42, 64) is formed in the work wafer, from the second side of the work wafer. The work wafer has a first conductivity type (N) and a first doping level, the first doped region has the first conductivity type and a second doping level higher than the first doping level. A device active region (25, 62) having a channel region (76) extending in the direction is formed in the work wafer, on the first side of the work wafer. The first doped region and the device active region delimit, in the work wafer, a drift region (30, 66). The first doped region is formed before the device active region.