公开(公告)号：EP3648108A1

公开(公告)日：2020-05-06

申请号：EP19206356.8

申请日：2019-10-30

Applicant: STMicroelectronics S.r.l.

Inventor： PASOTTI, Marco ,  ZURLA, Riccardo ,  CABRINI, Alessandro ,  TORELLI, Guido ,  VOLPE, Flavio Giovanni

IPC: G11C13/00 ,  G11C7/14

Abstract: A phase-change memory device (1), comprising: a memory array (2) of PCM cells, a variable current generator (4), and a sense amplifier (6). The current generator (4) comprises a reference array (4a) of PCM cells programmed in SET resistance state. The phase-change memory device further comprises a decoder for addressing each cell of the reference array so that a respective plurality of SET current signals is generated through the plurality of reference cells; and a controller (12) configured to receive at input said SET current signals, select a number of SET current signals having the lowest current values among the plurality of SET current signals, calculate a mean value of said lowest current values, and adjust the reference current (i ref ) to be lower than said mean value.