公开(公告)号：EP1994567A2

公开(公告)日：2008-11-26

申请号：EP07731623.0

申请日：2007-02-14

申请人： STMicroeletronics Crolles 2 SAS

发明人： MAZOYER, Pascale ,  BOSSU, Germain

IPC分类号： H01L29/792 ,  H01L29/06 ,  H01L21/336

CPC分类号： H01L29/7841 ,  H01L29/0653 ,  H01L29/1054 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/66636 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923

摘要： The invention concerns a MOS transistor comprising a conductive extension (10) of its source region, isolated from its substrate, and extending partly under its channel.