摘要:
An RE123-based superconducting wire (10) of the invention includes: a substrate (11); an intermediate layer (12) provided above the substrate (11); and an oxide superconducting layer (14) that is provided above the intermediate layer (12) and is made of an oxide superconductor expressed by a composition formula of RE 1 Ba 2 Cu 3 O 7-´ where RE represents one kind of or two or more kinds of rare earth elements in the formula, wherein an Hf-containing compound of 0.5 to 10 mol% is introduced into the oxide superconducting layer (14), a different phase containing Hf is dispersed in the oxide superconducting layer (14) as a flux pinning center, and the a-axial-ratio of the oxide superconducting layer (14) is less than or equal to 1.5%.
摘要:
An RE123-based superconducting wire (10) of the invention includes: a substrate (11); an intermediate layer (12) provided above the substrate (11); and an oxide superconducting layer (14) that is provided above the intermediate layer (12) and is made of an oxide superconductor expressed by a composition formula of RE 1 Ba 2 Cu 3 O 7-´ where RE represents one kind of or two or more kinds of rare earth elements in the formula, wherein an Hf-containing compound of 0.5 to 10 mol% is introduced into the oxide superconducting layer (14), a different phase containing Hf is dispersed in the oxide superconducting layer (14) as a flux pinning center, and the a-axial-ratio of the oxide superconducting layer (14) is less than or equal to 1.5%.
摘要:
An RE123-based superconducting wire (10) of the invention includes: a substrate (11); an intermediate layer (12) provided above the substrate (11); and an oxide superconducting layer (14) that is provided above the intermediate layer (12) and is made of an oxide superconductor expressed by a composition formula of RE 1 Ba 2 Cu 3 O 7-δ where RE represents one kind of or two or more kinds of rare earth elements in the formula, wherein an Hf-containing compound of 0.5 to 10 mol% is introduced into the oxide superconducting layer (14), a different phase containing Hf is dispersed in the oxide superconducting layer (14) as a flux pinning center, and the a-axial-ratio of the oxide superconducting layer (14) is less than or equal to 1.5%.
摘要翻译:本发明的基于RE123的超导线(10)包括:衬底(11); 设置在所述基板(11)上方的中间层(12); 以及设置在所述中间层(12)的上方并由RE 1 Ba 2 Cu 3 O 7-'的组成式表示的氧化物超导体制成的氧化物超导层(14),其中RE表示一种或两种或 式中的更多种稀土元素,其中将0.5-10mol%的含Hf化合物引入氧化物超导层(14)中,将含有Hf的不同相分散在氧化物超导层(14)中,作为 磁通钉扎中心,氧化物超导层(14)的a轴比率小于或等于1.5%。
摘要:
A copper oxide thin film mainly containing CuO is formed by a plasma film-forming process on a substrate for film formation. The friction coefficient of the copper oxide thin film can be controlled remarkably low.
摘要:
An ion source impinging on the surface of the substrate to be coated is used to enhance a MOCVD, PVD or other process for the preparation of superconducting materials.
摘要:
Described is a method of screening organometallic materials for catalysis, the method comprising making an array of organometallic materials by delivering a first component of a first organometallic material and a first component of a second organometallic material to first and second regions on a substrate, delivering a second component of the first organometallic material and a second component of the second organometallic material to the first and second regions on the substrate, simultaneously reacting the components to form at least two organometallic materials, and screening the array of organometallic materials in parallel for a chemical property, the chemical property being catalysis.
摘要:
Metallic materials are mixed with an organic chelating agent so as to result in a given metal composition to prepare a transparent aqueous solution of organic metal chelate complexes. The aqueous solution is spray-dried to obtain a powder comprising the amorphous organic metal chelate complexes. The powder is burned to produce a metal oxide. The powder comprising the complexes is molded into a tablet to obtain a target, which is used to form a thin metal oxide film. In producing the metal oxide, compositional control is satisfactory and particle shape control is easy. With the target, a thin metal oxide film having a proper composition can be efficiently produced by the laser deposition method, etc.
摘要:
A film deposition method and apparatus capable of forming a film on a substrate having a large area are provided. The film deposition method of forming a film by scattering a deposition material from a surface of a target material (14) and depositing the scattered deposition material onto a surface of a substrate (12), comprising a step of arranging the substrate (12) and the target material (14) such that the surface of the substrate (12) forms an angle to the surface of the target material (14), and a deposition step of forming the film on the substrate (12) in such a manner that an area of a film surface is continuously increased in a two-dimensional direction, while moving a relative position of the substrate (12) with respect to the target material (14).