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1.发明授权
公开(公告)号：EP2144294B1
公开(公告)日：2018-11-21
申请号：EP09164894.9
申请日：2009-07-08
发明人： Ha, Jae-Heung , Song, Young-Woo , Lee, Jong-Hyuk , Jeong, Jong-Han , Kim, Min-Kyu , Mo, Yeon-Gon , Jeong, Jae-Kyeong , Chung, Hyun-Joong , Kim, Kwang-Suk , Yang, Hui-Won , Choi, Chaungi
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
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2.发明授权Method of manufacturing semiconductor active layer and method of manufacturing thin film transistor using the same 有权一种用于制造有源半导体层和制造薄膜晶体管的方法，使用该方法
公开(公告)号：EP2017881B1
公开(公告)日：2013-11-27
申请号：EP08160476.1
申请日：2008-07-16
发明人： Jeong, Jong-Han , Jeong, Jae-Kyeong , Park, Jin-Seong , Mo, Yeon-Gon , Yang, Hui-Won , Kim, Min-Kyu , Ahn, Tae-Kyung , Shin, Hyun-Soo , Lee, Hun-Jung
IPC分类号： H01L21/02 , H01L21/363 , C23C14/08 , C23C14/34
CPC分类号： C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631
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公开(公告)号：EP1677374B1
公开(公告)日：2013-09-11
申请号：EP05111624.2
申请日：2005-12-02
发明人： Suh, Min-Chul , Koo, Jae-Bon Legal & IP Team, Samsung SDI Co., Ltd , Mo, Yeon-Gon , Ahn, Teak , Jeong, Jong-Han
CPC分类号： H01L51/0541 , H01L51/0021 , H01L51/0036 , H01L51/0097 , H01L51/0516
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