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    Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount
    1.
    发明公开
    Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 有权
    载体的半导体激光二极管的制造方法的子载波，并且所述半导体激光二极管到载体

    公开(公告)号：EP1458036A1

    公开(公告)日：2004-09-15

    申请号：EP03257874.2

    申请日：2003-12-15

    申请人： Samsung Electronics Co., Ltd.

    发明人： Kwak, Joon-seop ,  Sung, Youn-joon ,  Chae, Su-Hee

    IPC分类号： H01L33/00

    CPC分类号： H01S5/0206 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2205 ,  H01L2924/00

    摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

    摘要翻译： 本发明提供一种基台倒装芯片接合到阶梯第一和第二电极的半导体激光二极管芯片。 所述基座包括具有由台阶高度对应于所述第一和第二电极之间的高度差分离的第一和第二表面的基板; 第一和第二金属层形成于所述第一表面和第二表面，分别在相同的厚度; 以及第一和第二焊料层被分别形成为相同的厚度在所述第一和第二金属层，和分别被结合到第一电极和第二电极。