公开(公告)号：EP3419122A1

公开(公告)日：2018-12-26

申请号：EP18178817.5

申请日：2018-06-20

申请人： Redwave Labs Ltd

发明人： PERMOGOROV, Dmitri

IPC分类号： H01S5/065 ,  H01S5/00 ,  H01S5/022 ,  H01S5/12

CPC分类号： H01S5/0656 ,  H01S5/005 ,  H01S5/0064 ,  H01S5/0071 ,  H01S5/0078 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/12 ,  H01S2301/02

摘要： A narrow linewidth laser in which an all-optical feedback line-up is used to improve the linewidth from a conventional laser source, such as a laser diode. The feedback line-up comprises an optical device having a controllable unbalanced optical coupler which may be an optical isolator (110) arranged on a cavity input path to couple a source signal from the laser source into the optical cavity, and to couple a seed signal received back from the optical cavity (124) into the laser source which may be a DFB laser diode (104). The seed signal has a lower power than the source signal. The unbalanced optical coupler may be an optical isolator arranged to couple the seed signal into the laser source at a power level selected to promote preferential stimulated emission within a narrower linewidth. By controlling the power of seed signal such that only a small portion thereof influences the lasing cavity, the narrowing effect of the preferential stimulated emission can be enhanced and ASE may be suppressed ,ore efficiently. The beam path between the LD (104) and the optical cavity (124) may further comprise two lenses (108,112) and two beam steering mirrors with one fixed mirror (116) and an adjustable mirror (118). The optical cavity may be a folded Fabry-Perot cavity with a folding mirror (128) and two end mirrors (120,122).

公开(公告)号：EP3208896A4

公开(公告)日：2018-07-04

申请号：EP15851412

申请日：2015-10-08

申请人： KOITO MFG CO LTD

发明人： SHIBATA YUICHI ,  MOCHIZUKI MITSUYUKI ,  TATSUKAWA MASASHI

IPC分类号： H01S5/022 ,  H01L23/045 ,  H01L23/367 ,  H01S5/024

CPC分类号： H01S5/02476 ,  H01L23/045 ,  H01L23/3677 ,  H01L2224/48091 ,  H01S5/022 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02244 ,  H01S5/02276 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/02469 ,  H01L2924/00014

摘要： Provided is a semiconductor laser device having enhanced heat dissipation properties. A semiconductor laser device 10 comprises a stem 11, a cap 12 that is attached to an upper surface of the stem 11, a semiconductor laser element 13, and a power-feeding member 14 that is at least partially buried in the stem 11. The power-feeding member 14 comprises an element-side terminal 32 that is electrically connected to the semiconductor laser element 13, and an external terminal 33. The external terminal 33 of the power-feeding member 14 is exposed on a side surface or the upper surface of the stem 11, and an attaching surface 11b that is attached to a mounting object is provided in a lower surface of the stem 11.

公开(公告)号：EP3338023A1

公开(公告)日：2018-06-27

申请号：EP16837921.2

申请日：2016-08-19

申请人： Soraa Laser Diode Inc.

发明人： RARING, James, W. ,  RUDY, Paul ,  GOUTAIN, Eric ,  TROTTIER, Troy ,  MCLAURIN, Melvin ,  HARRISON, James

IPC分类号： F21S8/10 ,  F21V9/00 ,  F21V9/14 ,  H01L33/00

CPC分类号： H01S5/02469 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02438 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4025 ,  H01L2924/00014

摘要： The embodiments described herein provide a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. A violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials may be closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source.

公开(公告)号：EP3172605A1

公开(公告)日：2017-05-31

申请号：EP15753971.9

申请日：2015-07-23

申请人： Bbright

发明人： HACHAIR, Xavier ,  POIVRE, Aurélia ,  ARTHUIS, Guillaume

IPC分类号： G02B6/42 ,  G02B17/06

CPC分类号： G03B21/208 ,  G02B6/4201 ,  G02B6/4206 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4268 ,  G02B6/428 ,  G02B6/43 ,  G02B17/061 ,  G02B19/0028 ,  G02B19/0057 ,  G03B21/16 ,  G03B21/2013 ,  G03B21/2033 ,  G03B21/2066 ,  H01S5/02236 ,  H01S5/02284 ,  H01S5/02423 ,  H01S5/4012

摘要： The invention relates to a module (10) for coupling a laser diode array, including a base (11) for supporting the laser diodes, a network of laser diodes (201) suitable for emitting laser beams, not necessarily at the same wavelength, towards the outside of the base (11). Moreover, the coupling module comprises a Cassegrain optical system, suitable for focussing laser beams emitted by said network of laser diodes and made up of a convex hyperbolic curved mirror (14) and a concave parabolic curved mirror (15), collimators (131) suitable for concentrating laser beams in a preferred direction, a coolant suitable for maintaining said network of laser diodes at a constant temperature and a PCB card suitable for supplying electricity to said network of laser diodes. The invention is particularly advantageous when used in video projection devices.

摘要翻译： 本发明涉及用于耦合激光二极管阵列的模块（10），该激光二极管阵列包括用于支撑激光二极管的基座（11），适于发射不一定在相同波长的激光束的激光二极管（201）网络， （11）的外部。 此外，耦合模块包括卡塞格伦光学系统，适用于聚焦由所述激光二极管网络发射的激光束，并由凸双曲面镜（14）和凹面抛物面曲面镜（15）构成，准直器（131） 用于在优选方向上聚集激光束，适合于将所述激光二极管网络维持在恒定温度的冷却剂，以及适于向所述激光二极管网络供电的PCB卡。 当用于视频投影设备时，本发明特别有利。

公开(公告)号：EP2472680A4

公开(公告)日：2016-04-27

申请号：EP10844509

申请日：2010-01-27

申请人： MITSUBISHI ELECTRIC CORP

发明人： TAMAYA MOTOAKI ,  NAKAMURA AKIRA ,  NANBA CHISE

IPC分类号： H01S5/022 ,  H01L23/10 ,  H01R13/52

CPC分类号： H01S5/02212 ,  H01L23/10 ,  H01L2924/0002 ,  H01R4/58 ,  H01R13/03 ,  H01S5/0222 ,  H01S5/02236 ,  H01L2924/00

公开(公告)号：EP2866317A1

公开(公告)日：2015-04-29

申请号：EP14174064.7

申请日：2014-06-26

申请人： IMEC ,  Universiteit Gent

发明人： Van Thourhout, Dries ,  Wang, Zhechao ,  Van Campenhout, Joris ,  Pantouvaki, Marianna

IPC分类号： H01S5/223 ,  H01S5/02 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227

CPC分类号： H01S5/2077 ,  G02B6/12 ,  H01S5/0203 ,  H01S5/021 ,  H01S5/02236 ,  H01S5/026 ,  H01S5/042 ,  H01S5/2027 ,  H01S5/2214 ,  H01S5/2218 ,  H01S5/2272 ,  H01S5/3013 ,  H01S2301/176

摘要： The present invention relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate (1) an electrically insulating layer (2), etching a trench (10) having a width in the range between 50 nm and 800 nm through the electrically insulating layer (2), thereby locally exposing the silicon substrate (1), providing a III-V layer stack in the trench (10) by local epitaxial growth to form a channel waveguide; and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

摘要翻译： 本发明涉及一种用于在半导体光子平台以及相应的器件/系统上集成亚微米III-V波导激光器的方法。 该方法包括在半导体衬底（1）上提供电绝缘层（2），通过电绝缘层（2）蚀刻宽度在50nm和800nm之间的沟槽（10），从而局部暴露 硅衬底（1），通过局部外延生长在沟槽（10）中提供III-V层堆叠以形成沟道波导; 以及提供用于将辐射限制在局部外延生长的通道波导中的光限制元件。

公开(公告)号：EP2846423A1

公开(公告)日：2015-03-11

申请号：EP12876054.3

申请日：2012-05-01

申请人： Mitsubishi Electric Corporation

发明人： MATSUSUE, Akihiro

IPC分类号： H01S5/022 ,  H01L31/02

CPC分类号： H01L23/3731 ,  H01L23/3735 ,  H01L31/024 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02276 ,  H01S5/02469 ,  H01S5/06226 ,  H01S5/183 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00011

摘要： A metallic ring (2) is provided on the multilayer ceramic substrate (1). An optical semiconductor laser (6) is provided on the multilayer ceramic substrate (1) inside the metallic ring (1). A metallic cap (10) with a window (9) is joined to the metallic ring (2). The metallic ring (2) covers the optical semiconductor laser (6). An external heat sink (11) is joined to an external side surface of the metallic cap (10). These features make it possible to improve high-frequency characteristic, producibility and heat dissipation.

摘要翻译： 金属环（2）设置在多层陶瓷基板（1）上。 在金属环（1）内的多层陶瓷基板（1）上设置有光学半导体激光器（6）。 具有窗（9）的金属盖（10）与金属环（2）接合。 金属环（2）覆盖光半导体激光器（6）。 外部散热器（11）与金属盖（10）的外侧面接合。 这些特性使得可以提高高频特性，可生产性和散热性。

公开(公告)号：EP2722945A1

公开(公告)日：2014-04-23

申请号：EP12800321.7

申请日：2012-04-04

申请人： Fujikura Ltd.

发明人： TOYOHARA, Nozomu ,  SAKAMOTO, Akira ,  KASAI, Yohei

IPC分类号： H01S5/022 ,  G02B6/42

CPC分类号： G02B6/4272 ,  G02B6/4207 ,  G02B6/4219 ,  G02B6/4236 ,  G02B6/4238 ,  G02B6/4246 ,  G02B6/4248 ,  G02B6/4257 ,  G02B6/426 ,  G02B6/4265 ,  G02B6/4267 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02208 ,  H01S5/02236 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/02476 ,  H01L2924/00014

摘要： The semiconductor laser module (1) includes: a laser mount (31) having thereon a semiconductor laser chip (32); a fiber mount (40) having thereon an optical fiber (2); a submount (20) on which the laser mount (31) and the fiber mount (40) are placed; and a substrate (10) on which the submount 20 is placed, the substrate (10) having protrusions (11a to 11d) on a top surface thereof, the submount 20 being joined to the substrate (10) with a soft solder (61) spread between the submount (20) and the substrate (10).

公开(公告)号：EP2707929A1

公开(公告)日：2014-03-19

申请号：EP12782217.9

申请日：2012-05-07

申请人： Obzerv Technologies Inc.

发明人： DEMERS, Louis ,  GODIN, Jacques ,  GRENIER, Martin

IPC分类号： H01S5/02

CPC分类号： H01S5/02236 ,  H01S5/02264 ,  H01S5/02276 ,  H01S5/02438 ,  H01S5/02469 ,  H01S5/06216 ,  H01S5/4025 ,  Y10T29/49826 ,  Y10T29/49947

摘要： The laser mount arrangement can have a laser bar and a driver positioned adjacent to one another and secured against a connection face of a heat sink base. The heat sink base is connected to and forms a first electrical connection between the laser bar and the driver. A second electrical connection is also provided between the laser bar and the driver opposite the heat sink base, which can be in the form of a flexible metal sheet with a narrow upward fold. This arrangement can provide a low inductance path for the current.

公开(公告)号：EP2245711A2

公开(公告)日：2010-11-03

申请号：EP09709736.4

申请日：2009-02-17

申请人： Jansen, Michael

发明人： Jansen, Michael

IPC分类号： H01S5/04 ,  H01S5/183 ,  H01S5/125

CPC分类号： H01S5/183 ,  H01S3/109 ,  H01S5/005 ,  H01S5/0092 ,  H01S5/02236 ,  H01S5/02296 ,  H01S5/026 ,  H01S5/0286 ,  H01S5/14 ,  H01S5/423 ,  H01S5/5018 ,  H01S5/5036 ,  H01S5/5081

摘要： A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at least one distributed Bragg reflector. In one implementation the optical amplifier chip includes at least two gain elements that are spaced apart and have a fill factor no greater than 0.5. As a result the total optical gain may be increased. The optical amplifier chip may be operated as a superluminescent LED. Alternately, the optical amplifier chip may be used with external optical elements to form an extended cavity laser. Individual gain elements may be operated in a reverse biased mode to support gain-switching or mode-locking.