-
1.发明授权
公开(公告)号：EP1881522B1
公开(公告)日：2016-05-11
申请号：EP07101402.1
申请日：2007-01-30
发明人： Paek, Ho-sun , Sung, Youn-joon , Ha, Kyoung-ho , Son, Joong-kon , Lee, Sung-nam
CPC分类号： H01L21/02647 , H01L21/02378 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02469 , H01L21/02516 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02609 , H01L21/02642 , H01L21/02645
-
2.发明公开Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 有权载体的半导体激光二极管的制造方法的子载波，并且所述半导体激光二极管到载体
公开(公告)号：EP1458036A1
公开(公告)日：2004-09-15
申请号：EP03257874.2
申请日：2003-12-15
发明人： Kwak, Joon-seop , Sung, Youn-joon , Chae, Su-Hee
IPC分类号： H01L33/00
CPC分类号： H01S5/0206 , H01L33/62 , H01L2924/0002 , H01S5/0207 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/2205 , H01L2924/00
摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.
摘要翻译： 本发明提供一种基台倒装芯片接合到阶梯第一和第二电极的半导体激光二极管芯片。 所述基座包括具有由台阶高度对应于所述第一和第二电极之间的高度差分离的第一和第二表面的基板; 第一和第二金属层形成于所述第一表面和第二表面，分别在相同的厚度; 以及第一和第二焊料层被分别形成为相同的厚度在所述第一和第二金属层，和分别被结合到第一电极和第二电极。
-
公开(公告)号：EP1777788B1
公开(公告)日：2009-11-11
申请号：EP06253489.6
申请日：2006-07-03
发明人： Sakong, Tan , Sung, Youn-joon , Paek, Ho-sun
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
-
4.发明公开Method of fabricating a nitride-based semiconductor laser diode 有权Herstellungsverfahren einer Nitrid-Halbleiter-Laserdiode
公开(公告)号：EP1777788A2
公开(公告)日：2007-04-25
申请号：EP06253489.6
申请日：2006-07-03
发明人： Sakong, Tan , Sung, Youn-joon , Paek, Ho-sun
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： Provided is a method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate (2) at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along direction; growing an n-GaN layer (20) on the GaN substrate (2) between the masks so that two (1-100) edges of the n-GaN layer (20) are thicker than the remaining regions thereof; sequentially stacking an n-clad layer (24), an active layer (26), and a p-clad layer (28) on the n-GaN layer (20) to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer (24) aligned laterally with the active layer (26) and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane (30).
摘要翻译： 提供了一种制造氮化物基半导体激光二极管的方法，其可以最小化腔镜面上的光吸收并改善腔镜面的表面粗糙度。 该方法包括以下步骤：在（0001）GaN（氮化镓）衬底（2）上形成至少两个掩模，其间隔开等于沿<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底（2）上生长n-GaN层（20），使得n-GaN层（20）的两个（1-100）边缘比其余区域厚; 在n-GaN层（20）上顺序层叠n包覆层（24），有源层（26）和p覆层（28），以形成边缘发射激光腔结构，其中产生激光 在有源层中穿过与有源层（26）横向排列的n覆层（24）的区域并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面（30）。
-
公开(公告)号：EP1777788A3
公开(公告)日：2007-11-28
申请号：EP06253489.6
申请日：2006-07-03
发明人： Sakong, Tan , Sung, Youn-joon , Paek, Ho-sun
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： Provided is a method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate (2) at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along direction; growing an n-GaN layer (20) on the GaN substrate (2) between the masks so that two (1-100) edges of the n-GaN layer (20) are thicker than the remaining regions thereof; sequentially stacking an n-clad layer (24), an active layer (26), and a p-clad layer (28) on the n-GaN layer (20) to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer (24) aligned laterally with the active layer (26) and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane (30).
-
6.发明授权Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 有权载体的半导体激光二极管的制造方法的子载波，并且所述半导体激光二极管到载体
公开(公告)号：EP1458036B1
公开(公告)日：2005-11-23
申请号：EP03257874.2
申请日：2003-12-15
发明人： Kwak, Joon-seop , Sung, Youn-joon , Chae, Su-Hee
IPC分类号： H01L33/00
CPC分类号： H01S5/0206 , H01L33/62 , H01L2924/0002 , H01S5/0207 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/2205 , H01L2924/00
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.01 秒)
