公开(公告)号：EP4325502A1

公开(公告)日：2024-02-21

申请号：EP23157812.1

申请日：2023-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Yumin ,  KANG, Jooheon ,  KIM, Sunho ,  KIM, Seyun ,  GARAM, Park ,  SONG, Hyunjae ,  AHN, Dongho ,  YANG, Seungyeul ,  WOO, Myunghun ,  LEE, Jinwoo

IPC: G11C13/00 ,  H10B63/00

Abstract: Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a gate insulating layer surrounding a side surface of the semiconductor layer, and a plurality of insulating patterns and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer. The plurality of insulating patterns and the plurality of gate electrodes may surround a side surface of the gate insulating layer.