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    MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明公开
    MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：EP3965160A1

    公开(公告)日：2022-03-09

    申请号：EP21178809.6

    申请日：2021-06-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： KIM, Yumin ,  KIM, Seyun ,  KIM, Jinhong ,  MIZUSAKI, Soichiro ,  CHO, Youngjin

    IPC: H01L27/24 ,  H01L45/00

    Abstract: The disclosed memory device (200) includes a protrusion portion (211) protruding from a first surface (210a) of an insulating structure (210) in a first direction (D1), a recording material layer (230) extending along a protruding surface (210b) of the protrusion portion and onto the first surface (210a), a channel layer (240) extending along a surface of the recording material layer, a gate insulating layer (250) on the channel layer, and a gate electrode (260) on the gate insulating layer at a location facing the protruding surface (210b). Preferably, a plurality of gate electrodes (260) are arranged along a second direction (D2), to realise a vertical NAND memory in which a plurality of memory cells (MC) are arrayed in a vertical direction.

    VARIABLE RESISTANCE MEMORY DEVICE
    5.
    发明公开
    VARIABLE RESISTANCE MEMORY DEVICE 审中-公开

    公开(公告)号：EP3961735A1

    公开(公告)日：2022-03-02

    申请号：EP21190578.1

    申请日：2021-08-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： KIM, Seyun ,  KIM, Doyoon ,  KIM, Yumin ,  KIM, Jinhong ,  MIZUSAKI, Soichiro ,  CHO, Youngjin

    IPC: H01L45/00 ,  H01L27/24

    Abstract: The disclosed variable resistance memory device (100) includes first and second conductive elements (E1, E2) which are spaced apart from each other on a variable resistance layer (130) which comprises a first layer (11) and a second layer (12) on the first layer, wherein the first layer includes a ternary or higher metal oxide containing two or more metals having different valences. For example, the first layer includes hafnium aluminum oxide and the second layer includes silicon oxide. The first and second conductive elements, in response to an applied voltage, form a current path in a direction perpendicular to a direction in which the first layer and the second direction are stacked. The variable resistance memory device has a wide range of resistance variation due to the metal oxide in which oxygen vacancies are easily formed.

    VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING
    6.
    发明公开
    VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING 审中-公开

    公开(公告)号：EP3852144A1

    公开(公告)日：2021-07-21

    申请号：EP21151132.4

    申请日：2021-01-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： CHO, Youngjin ,  YOON, Jungho ,  KIM, Seyun ,  KIM, Jinhong ,  MIZUSAKI, Soichiro

    IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

    Abstract: A vertical nonvolatile memory device including a memory cell string (CS) using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer (522) extending in a first direction and having a first surface opposite a second surface, a plurality of gates (531) and a plurality of insulators (532) alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer (521) extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film (523) extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.

    VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING
    10.
    发明公开
    VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING 审中-公开

    公开(公告)号：EP3944326A1

    公开(公告)日：2022-01-26

    申请号：EP21180142.8

    申请日：2021-06-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： KIM, Jinhong ,  KIM, Seyun ,  CHO, Youngjin

    IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

    Abstract: A vertical nonvolatile memory device including memory cell strings using a resistance change material is provided. Each of the memory cell strings of the nonvolatile memory device includes a semiconductor layer (522) extending in a first direction; a plurality of gates (531) and a plurality of insulators (532) alternately arranged in the first direction; a gate insulating layer (521) extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer; and a resistance change layer (523) extending in the first direction on a surface of the semiconductor layer. The resistance change layer includes a metal-semiconductor oxide including a mixture of a semiconductor material of the semiconductor layer and a transition metal oxide.

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