公开(公告)号：EP3115484A1

公开(公告)日：2017-01-11

申请号：EP16155085.0

申请日：2016-02-10

申请人： Samsung Electronics Co., Ltd.

发明人： YANG, Kiyeon ,  LEE, Changseung ,  KIM, Namjeong ,  KIM, Yeonhee

IPC分类号： C30B29/64 ,  H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L29/06 ,  H01L29/12 ,  H01L29/16

CPC分类号： G01N27/4141 ,  C30B25/04 ,  C30B29/46 ,  C30B29/60 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/3065 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7851 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

摘要： A transistor includes a substrate, a two-dimensional material including at least one layer that is substantially vertically aligned on the substrate such that an edge of the layer is on the substrate and the layer extends substantially vertical to the substrate, a source electrode and a drain electrode connected to opposite ends of the two-dimensional material, a gate insulation layer on the two-dimensional material between the source electrode and the drain electrode, and a gate electrode on the gate insulation layer. Each layer includes a semiconductor having a two-dimensional crystal structure.

摘要翻译： 在该层的边缘上的晶体管包括衬底，一个二维材料，包括至少一个层并基本上垂直地在测试的底物对准确实是在基板和层延伸基本垂直于基板，源电极和一个 漏极连接到两维材料，在源极电极和漏极电极，和栅极绝缘层上的栅电极之间的二维材料的栅极绝缘层的相对端的电极。 每层包括具有二维晶体结构的半导体。