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公开(公告)号:EP3302007A1
公开(公告)日:2018-04-04
申请号:EP17188408.3
申请日:2017-08-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: PARK, Jin Yong , KIM, Jeong Geun , PARK, Si Young
CPC classification number: H05K1/184 , H01R4/58 , H01R12/52 , H01R12/57 , H01R12/58 , H01R12/73 , H05K1/0213 , H05K1/115 , H05K1/145 , H05K3/341 , H05K3/3457 , H05K7/142 , H05K2201/09072 , H05K2201/09754 , H05K2201/0999 , H05K2201/10189 , H05K2201/1028 , H05K2201/10295 , H05K2201/10303 , H05K2201/10409
Abstract: In accordance with an aspect of the present disclosure, a contact structure for an electronic device may include a printed circuit board (PCB) including at least one hole vertically formed through the PCB, a housing (e.g., a mechanical part) on which the PCB is seated, and a contact element, at least part of which is brought into contact with the housing disposed on a side of the hole of the PCB and below the same. The contact element may include a contact part soldered on a peripheral portion around the hole, and a protrusion passing through the hole and making contact with the housing disposed below the PCB.
Abstract translation: 根据本公开的一个方面,用于电子设备的接触结构可以包括:印刷电路板(PCB),包括穿过PCB垂直形成的至少一个孔;外壳(例如机械部分),PCB 并且接触元件的至少一部分与布置在PCB的孔的一侧上并且在其下方的壳体接触。 接触元件可以包括焊接在孔周围的周边部分上的接触部分以及穿过孔并与设置在PCB下方的壳体接触的突起。
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公开(公告)号:EP4557105A1
公开(公告)日:2025-05-21
申请号:EP24183389.6
申请日:2024-06-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: PARK, Jin Yong , PARK, Jung Ho , KIM, In-Su , SEOK, Jun Yeong , JEONG, Jae Yong
IPC: G06F12/02
Abstract: A storage device and an operating method of the storage device are provided. The storage device comprises a non-volatile memory including a virtual block including an L2P pair region storing a pair of a logical page number (LPN) and a physical page number (PPN) (LPN-PPN pair) and a data region storing data addressed to the PPN, a volatile memory including an L2V table storing a virtual block number (VBN) corresponding to the LPN, an L2P cache storing the LPN-PPN pair, and an LPN range map storing a portion of the LPN stored in the L2P pair region of the virtual block, and a controller configured to control the non-volatile memory and the volatile memory.
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