摘要:
A nonvolatile memory device includes; a memory cell array including a meta data region storing chip-level information, control logic identifying a target cell in response to a command, machine learning (ML) logic inferring an optimum parameter based on the chip-level information and physical information associated with the target cell applied as inputs to an artificial neural network model, and a buffer memory configured to store weight parameters of the artificial neural network model.
摘要:
A nonvolatile memory device includes a plurality of memory blocks and a control logic circuit configured to perform a first page on-chip valley search (OVS) operation on memory cells connected to one wordline of a memory block selected in response to an address, among the plurality of memory blocks, in response to a first read command. The control logic circuit is further configured to change a read level of at least one state using detection information of the first page OVS operation, and to perform a second page read operation on the memory cells using the changed read level in response to a second read command.
摘要:
A memory device (10) may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on the cell count information when an error in read data, received from the memory device (10) performing a read operation is not corrected. A memory controller (20) may control the memory device (10) to execute a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When an error in the read data is successfully corrected, the memory controller (20) may update a table (24), stored in the memory controller (20), using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model (25).
摘要:
A vertical non-volatile memory device capable of stably maintaining an operating temperature in a chip level, a semiconductor package including the memory device, and a heat dissipation method of the memory device. The vertical non-volatile memory device includes a substrate on which a cell array area and an extension area are defined, a vertical channel structure formed on the substrate, a thermoelectric device including at least two semiconductor pillars formed on the substrate, , and a stacked structure on the substrate. The stacked structure includes a gate electrode layer and an interlayer insulation layer which are stacked alternately along sidewalls of the vertical channel structure and the at least two semiconductor pillars. The at least two semiconductor pillars include an n-type semiconductor pillar and a p-type semiconductor pillar which are electrically connected to each other through a conductive layer on the substrate.
摘要:
An electronic device comprising a display and a controller. The controller is configured to: control the display to display a keyboard including a plurality of alphanumeric keys; control the display, based on duration of an input on one of the plurality of alphanumeric keys being longer than a threshold amount of time, to expand the displayed input alphanumeric key to display one or more visual elements, each of the one or more visual elements representing an application stored in the electronic device corresponding to a character of the input alphanumeric key; and in response to an input on one or more of the visual elements, execute the application represented by the input visual element, wherein the expansion of the displayed input alphanumeric key to fit the one or more visual elements is displayed over adjacent keys of the keyboard.
摘要:
A memory device (10) may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on the cell count information when an error in read data, received from the memory device (10) performing a read operation is not corrected. A memory controller (20) may control the memory device (10) to execute a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When an error in the read data is successfully corrected, the memory controller (20) may update a table (24), stored in the memory controller (20), using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model (25).
摘要:
A controller (400) including a non-volatile memory interface circuit (460) connected to at least one non-volatile memory device (300) and configured to control the at least one non-volatile memory device (300); an error correction circuit (430) configured to perform an error correction operation on a codeword received from the non-volatile memory interface circuit (460) according to an error correction decoding level from among a plurality of error correction decoding levels, wherein the non-volatile memory interface circuit (460) is further configured to: receive side information from the at least one non-volatile memory device (300); predict a distribution of memory cells based on the side information; and select the error correction decoding level from among the plurality of error correction decoding levels according to the predicted distribution.
摘要:
A method and an apparatus for executing a user function using voice recognition. The method includes displaying a user function execution screen; confirming a function to be executed according to voice input; displaying a voice command corresponding to the confirmed function on the user function execution screen; recognizing a voice input by a user, while a voice recognition execution request is continuously received; and executing the function associated with the input voice command, when the recognized voice input is at least one of the displayed voice command.
摘要:
A method of connecting a service between a device and at least one other device is provided. The method includes recording, by the device, a user voice input in a state where a voice command button has been input, outputting first information based on the recorded user voice when an input of the voice command button is cancelled, receiving, by the device, second information corresponding to the first information, recognizing a service type according to the first information and the second information, connecting the device to a subject device in an operation mode of the device determined according to the recognized service type, and performing a service with the connected subject device.