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公开(公告)号：EP4220736A2
公开(公告)日：2023-08-02
申请号：EP23153062.7
申请日：2023-01-24
发明人： KIM, Sangwook , BYUN, Kyung-Eun , SHIN, Keunwook , JUNG, Moonil , KIM, Euntae , YANG, Jeeeun , LEE, Kwanghee
IPC分类号： H01L29/786
摘要： A transistor includes an oxide semiconductor layer, a source electrode and a drain electrode disposed spaced apart from each other on the oxide semiconductor layer, a gate electrode spaced apart from the oxide semiconductor layer, a gate insulating layer disposed between the oxide semiconductor layer and the gate electrode, and a graphene layer disposed between the gate electrode and the gate insulating layer and doped with a metal.
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公开(公告)号：EP4401145A1
公开(公告)日：2024-07-17
申请号：EP24150358.0
申请日：2024-01-04
发明人： SEOL, Minsu , YANG, Jeeeun , KIM, Sangwook , BYUN, Kyung-Eun , LEE, Eunkyu
IPC分类号： H01L29/66 , H01L29/786 , H01L29/78
CPC分类号： H01L29/78696 , H01L29/66969 , H01L29/7869 , H01L29/78642 , H01L29/785
摘要： Disclosed are a semiconductor device, a method of manufacturing the same, and an electronic element and an electronic apparatus each including the semiconductor device. The semiconductor device may include a substrate, a channel layer on the substrate, a first electrode and a second electrode on two opposite ends of the channel layer, respectively, and spaced apart from each other, a gate electrode on the channel layer and spaced apart from the first electrode and the second electrode, a gate dielectric material provided between the channel layer and the gate electrode, and a chalcogen compound layer being at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer.
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公开(公告)号：EP4350779A1
公开(公告)日：2024-04-10
申请号：EP23200161.0
申请日：2023-09-27
发明人： YANG, Jeeeun , KIM, Sangwook , KIM, Euntae , LEE, Kwanghee , JUNG, Moonil
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H10B43/27 , H01L21/8238
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a lower electrode provided on a substrate, a buffer layer provided on the lower electrode and including first indium, an oxide semiconductor layer provided on the buffer layer and including second indium, a gate electrode provided apart from the oxide semiconductor layer, and an upper electrode provided on the oxide semiconductor layer, wherein a content of the first indium is greater than a content of the second indium.
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4.发明授权
公开(公告)号：EP3273513B1
公开(公告)日：2020-05-06
申请号：EP17181904.8
申请日：2017-07-18
发明人： BAE, Woojin , KWON, Seunguk , MAH, Sangkook , YANG, Jeeeun , YOON, Dukhyoung , HAN, Sungsoo
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5.发明公开
公开(公告)号：EP4391760A1
公开(公告)日：2024-06-26
申请号：EP23219085.0
申请日：2023-12-21
发明人： KIM, Sangwook , LEE, Kwanghee , YANG, Jeeeun , JUNG, Moonil , KIM, Euntae , CHA, Youngkwan
IPC分类号： H10B12/00 , G11C11/403
CPC分类号： H10B12/00 , H10B12/01 , G11C11/403 , G11C11/405
摘要： A memory device includes a read word line on a substrate, a first channel extending along a plane perpendicular to an upper surface of the substrate, a second channel facing the first channel in parallel, a first gate insulation layer adjacent to the first channel between the first channel and the second channel, a second gate insulation layer adjacent to the second channel between the first channel and the second channel, a gate electrode adjacent to the first gate insulation layer between the first gate insulation layer and the second gate insulation layer, a write word line adjacent to the second gate insulation layer between the first gate insulation layer and the second gate insulation layer, a read bit line electrically connected to the first channel, and a write bit line electrically connected to the second channel.
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公开(公告)号：EP4220736A3
公开(公告)日：2023-08-09
申请号：EP23153062.7
申请日：2023-01-24
发明人： KIM, Sangwook , BYUN, Kyung-Eun , SHIN, Keunwook , JUNG, Moonil , KIM, Euntae , YANG, Jeeeun , LEE, Kwanghee
IPC分类号： H01L29/786 , H01L29/49
摘要： A transistor includes an oxide semiconductor layer, a source electrode and a drain electrode disposed spaced apart from each other on the oxide semiconductor layer, a gate electrode spaced apart from the oxide semiconductor layer, a gate insulating layer disposed between the oxide semiconductor layer and the gate electrode, and a graphene layer disposed between the gate electrode and the gate insulating layer and doped with a metal.
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7.发明公开BINDER, METHOD OF PREPARING THE BINDER, AND ANODE AND LITHIUM BATTERY INCLUDING THE BINDER 审中-公开粘合剂，制备粘合剂的方法以及包括粘合剂的阳极和锂电池
公开(公告)号：EP3273513A1
公开(公告)日：2018-01-24
申请号：EP17181904.8
申请日：2017-07-18
发明人： BAE, Woojin , KWON, Seunguk , MAH, Sangkook , YANG, Jeeeun , YOON, Dukhyoung , HAN, Sungsoo
CPC分类号： H01M4/386 , C08G73/1042 , C08G73/105 , C08G73/1067 , C08G73/1071 , H01M4/38 , H01M4/382 , H01M4/387 , H01M4/622 , H01M10/052 , H01M2004/021 , Y02T10/7011
摘要： A binder includes a third polymer including a cross-linked product of a first polymer and a second polymer, wherein the first polymer includes a first functional group and is at least one selected from a polyamic acid and a polyimide, wherein the second polymer includes a second functional group and is water-soluble, and wherein the first polymer and the second polymer are cross-linked by an ester bond formed by a reaction of the first functional group and the second functional.
摘要翻译： 粘合剂包括第三聚合物，其包含第一聚合物和第二聚合物的交联产物，其中第一聚合物包含第一官能团并且是选自聚酰胺酸和聚酰亚胺中的至少一种，其中第二聚合物包含 第二官能团并且是水溶性的，并且其中第一聚合物和第二聚合物通过由第一官能团和第二官能团的反应形成的酯键交联。
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