NONVOLATILE MEMORY WITH VARIABLE READ THRESHOLD
    1.
    发明公开
    NONVOLATILE MEMORY WITH VARIABLE READ THRESHOLD 有权
    具有可变的读取阈值不挥发存储器

    公开(公告)号:EP2084709A2

    公开(公告)日:2009-08-05

    申请号:EP07863614.9

    申请日:2007-10-29

    IPC分类号: G11C11/56

    CPC分类号: G11C11/5642 G11C2029/0411

    摘要: Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mapped to sub-ranges that are made wider, reducing errors.