公开(公告)号：EP1390782A2

公开(公告)日：2004-02-25

申请号：EP02740419.3

申请日：2002-03-08

申请人： Schott Glas

发明人： ANTON, Andrea ,  KÄLBER, Tobias ,  WOLFF, Detlef ,  LOHMEYER, Manfred ,  BRINKMANN, Matthias ,  GERSTNER, Klaus

IPC分类号： G02B1/00

CPC分类号： G02B6/12014 ,  G02B6/12021 ,  G02B6/2808

摘要： The invention relates to a AWG-coupler for the spectral separation of electromagnetic rays. According to the invention, a coupler with more stabile thermal behaviour in addition to having a smaller layout is obtained and is provided with a single free ray area for the injection and extraction of electromagnetic rays.

公开(公告)号：EP1208245B1

公开(公告)日：2003-02-19

申请号：EP00954559.1

申请日：2000-07-25

申请人： Schott Glas

发明人： LOHMEYER, Manfred ,  BAUER, Stefan ,  DANIELZIK, Burkhard ,  MÖHL, Wolfgang ,  FREITAG, Nina

IPC分类号： C23C16/56 ,  C23C16/24 ,  C23C16/515 ,  H01L31/04 ,  H01L21/205 ,  H01L31/075

CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/515 ,  C23C16/56 ,  H01L21/0242 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention relates to a plasma activated CVD method and to a device for producing a microcristalline Si:H layer on a substrate and to the use thereof, especially as a thin film solar cell. The inventive plasma activated CVD method includes the following steps: depositing at least one thin film of amorphous Si:H on the substrate according to the plasma activated CVD method; plasma-treating the amorphous Si:H layer with a hydrogen plasma, whereby said amorphous Si:H layer is converted to a microcristalline Si:H layer and if necessary repeating the two first steps. The inventive plasma activated CVD method is characterised in that the coating step or the treatment is carried out with a constant flow of coating gases or treatment gases and with a pulsed electromagnetic radiation which activates the plasma.

公开(公告)号：EP1208245A1

公开(公告)日：2002-05-29

申请号：EP00954559.1

申请日：2000-07-25

申请人： Schott Glas

发明人： LOHMEYER, Manfred ,  BAUER, Stefan ,  DANIELZIK, Burkhard ,  MÖHL, Wolfgang ,  FREITAG, Nina

IPC分类号： C23C16/56 ,  C23C16/24 ,  C23C16/515 ,  H01L31/04 ,  H01L21/205 ,  H01L31/075

CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/515 ,  C23C16/56 ,  H01L21/0242 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention relates to a plasma activated CVD method and to a device for producing a microcristalline Si:H layer on a substrate and to the use thereof, especially as a thin film solar cell. The inventive plasma activated CVD method includes the following steps: depositing at least one thin film of amorphous Si:H on the substrate according to the plasma activated CVD method; plasma-treating the amorphous Si:H layer with a hydrogen plasma, whereby said amorphous Si:H layer is converted to a microcristalline Si:H layer and if necessary repeating the two first steps. The inventive plasma activated CVD method is characterised in that the coating step or the treatment is carried out with a constant flow of coating gases or treatment gases and with a pulsed electromagnetic radiation which activates the plasma.