公开(公告)号：EP0922122B1

公开(公告)日：2003-03-12

申请号：EP97940121.3

申请日：1997-08-23

申请人： Schott Glas ,  CARL-ZEISS-STIFTUNG trading as Schott Glas

发明人： WALTHER, Marten ,  MÖHL, Wolfgang ,  DANIELZIK, Burkhard ,  KUHR, Markus ,  HOCHHAUS, Roland ,  BAUCH, Hartmut ,  HEMING, Martin ,  KÜPPER, Thomas ,  BEWIG, Lars

IPC分类号： C23C16/52

CPC分类号： H01J37/32192 ,  C23C16/402 ,  C23C16/511 ,  C23C16/545

摘要： The invention concerns a plasma CVD system (in particular a plasma pulse CVD system) with an array of microwave plasma electrodes (2a, b, c, d). According to the invention, in order to improve the homogeneity of the layer, interference is prevented by controlling adjacent plasma electrodes (2a, 2b; 2b, 2c; 2c, 2d) in a chronologically offset manner. To that end, micropulses (A, B) are provided within the macropulses of the plasma pulse CVD process. Additionally, the uniformity of the layer deposition at the interfaces between adjacent modules can be optimized by radio-frequency excitation by means of suitable electrodes (6, 62a-c), magnetic fields or the configuration of the gas inlets (5). The surface coated in an operating cycle can thus be scaled as required.

公开(公告)号：EP0922122A1

公开(公告)日：1999-06-16

申请号：EP97940121.0

申请日：1997-08-23

申请人： Schott Glas ,  CARL-ZEISS-STIFTUNG trading as Schott Glas

发明人： WALTHER, Marten ,  MÖHL, Wolfgang ,  DANIELZIK, Burkhard ,  KUHR, Markus ,  HOCHHAUS, Roland ,  BAUCH, Hartmut ,  HEMING, Martin ,  KÜPPER, Thomas ,  BEWIG, Lars

IPC分类号： H05H1 ,  C23C16 ,  H01J37

CPC分类号： H01J37/32192 ,  C23C16/402 ,  C23C16/511 ,  C23C16/545

摘要： The invention concerns a plasma CVD system (in particular a plasma pulse CVD system) with an array of microwave plasma electrodes (2a, b, c, d). According to the invention, in order to improve the homogeneity of the layer, interference is prevented by controlling adjacent plasma electrodes (2a, 2b; 2b, 2c; 2c, 2d) in a chronologically offset manner. To that end, micropulses (A, B) are provided within the macropulses of the plasma pulse CVD process. Additionally, the uniformity of the layer deposition at the interfaces between adjacent modules can be optimized by radio-frequency excitation by means of suitable electrodes (6, 62a-c), magnetic fields or the configuration of the gas inlets (5). The surface coated in an operating cycle can thus be scaled as required.

公开(公告)号：EP1208245B1

公开(公告)日：2003-02-19

申请号：EP00954559.1

申请日：2000-07-25

申请人： Schott Glas

发明人： LOHMEYER, Manfred ,  BAUER, Stefan ,  DANIELZIK, Burkhard ,  MÖHL, Wolfgang ,  FREITAG, Nina

IPC分类号： C23C16/56 ,  C23C16/24 ,  C23C16/515 ,  H01L31/04 ,  H01L21/205 ,  H01L31/075

CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/515 ,  C23C16/56 ,  H01L21/0242 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention relates to a plasma activated CVD method and to a device for producing a microcristalline Si:H layer on a substrate and to the use thereof, especially as a thin film solar cell. The inventive plasma activated CVD method includes the following steps: depositing at least one thin film of amorphous Si:H on the substrate according to the plasma activated CVD method; plasma-treating the amorphous Si:H layer with a hydrogen plasma, whereby said amorphous Si:H layer is converted to a microcristalline Si:H layer and if necessary repeating the two first steps. The inventive plasma activated CVD method is characterised in that the coating step or the treatment is carried out with a constant flow of coating gases or treatment gases and with a pulsed electromagnetic radiation which activates the plasma.

公开(公告)号：EP1264004A1

公开(公告)日：2002-12-11

申请号：EP01929385.1

申请日：2001-03-01

申请人： Schott Glas ,  Sakagami, Etsuro

发明人： DANIELZIK, Burkhard ,  KUHR, Markus ,  MÖHL, Wolfgang

IPC分类号： C23C16/511 ,  H01J37/32

CPC分类号： H01J37/32192 ,  C23C16/511

摘要： The invention provides that for each surface of a substrate (2) to be coated, a plasma is injected into a coating reactor (1) used for carrying out microwave PCVD methods, and the surface to be coated is perpendicularly orientated with regard to the direction of spreading of the corresponding plasma. Dielectric compensating elements (4a, b) are introduced into the vicinity of the microwave injection points (3) and correct for non-homogeneities resulting in the distribution of plasma thicknesses by altering the microwave field distribution.

公开(公告)号：EP1472195A1

公开(公告)日：2004-11-03

申请号：EP03704480.7

申请日：2003-01-28

申请人： Schott Glas ,  Carl Zeiss Stiftung Trading as Schott Glaswerke

发明人： MÖHL, Wolfgang ,  BEWIG, Lars ,  KÜPPER, Thomas ,  MARING, Wolfram ,  MOELLE, Christoph

IPC分类号： C03C17/34 ,  H01J61/35

CPC分类号： C03C17/3417 ,  H01J61/35

摘要： In order to improve the energy balance of an HID lamp, the quartz burner, preferably the inside thereof, is coated with a UV reflecting layer system by alternatingly applying amorphous thin layers made at least of titanium oxide and silicon oxide having the respective general stoichiometry TiOy and SiOx by means of a plasma impulse chemical vapor deposition (PICVD) method at a high power density and increased substrate temperatures ranging from 100° to 400° C, using small growth rates ranging from 1 nm/sec to 100 nm/sec so as to form an interference layer system having a thickness of less than 1200 nm and a minimized UV-active defective spot rate ranging from 0.1 to 1 percent.

公开(公告)号：EP1208245A1

公开(公告)日：2002-05-29

申请号：EP00954559.1

申请日：2000-07-25

申请人： Schott Glas

发明人： LOHMEYER, Manfred ,  BAUER, Stefan ,  DANIELZIK, Burkhard ,  MÖHL, Wolfgang ,  FREITAG, Nina

IPC分类号： C23C16/56 ,  C23C16/24 ,  C23C16/515 ,  H01L31/04 ,  H01L21/205 ,  H01L31/075

CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/515 ,  C23C16/56 ,  H01L21/0242 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention relates to a plasma activated CVD method and to a device for producing a microcristalline Si:H layer on a substrate and to the use thereof, especially as a thin film solar cell. The inventive plasma activated CVD method includes the following steps: depositing at least one thin film of amorphous Si:H on the substrate according to the plasma activated CVD method; plasma-treating the amorphous Si:H layer with a hydrogen plasma, whereby said amorphous Si:H layer is converted to a microcristalline Si:H layer and if necessary repeating the two first steps. The inventive plasma activated CVD method is characterised in that the coating step or the treatment is carried out with a constant flow of coating gases or treatment gases and with a pulsed electromagnetic radiation which activates the plasma.

公开(公告)号：EP0753082B1

公开(公告)日：1999-07-07

申请号：EP95914322.3

申请日：1995-03-29

申请人： Schott Glas ,  Carl Zeiss Stiftung Trading as Schott Glaswerke

发明人： HEMING, Martin ,  LANGE, Ulrich ,  LANGFELD, Roland ,  MÖHL, Wolfgang ,  OTTO, Jürgen ,  PAQUET, Volker ,  SEGNER, Johannes ,  WALTHER, Marten

IPC分类号： C23C16/52 ,  C23C16/50 ,  C23C16/44

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/511 ,  C23C16/515 ,  C23C16/52

摘要： A PCVD process is disclosed for producing coating layers of uniform thickness on domed substrates. The substrate surface to be coated is arranged in relation to the gas passage surface of a gas shower. In order to determine the appropriate processing parameters, in a first series of tests for one type of substrate to be coated the size of the gas passage surfaces and gas mass flows through the gas passage surfaces are kept constant while the intervals between plasma impulses are gradually modified, starting from an initial value tA until an optimum value teff is determined and until the uniformity of the thickness profile of the layers generated on the substrate may no longer be improved. If required, during a second series of tests the value teff may be kept constant while the thickness profile of the layers is further modified by further optimising the local parameters and/or the gas mass flows until its uniformity may no longer be improved. The device has a gas shower (10) subdivided into zones and whose gas passage surfaces (11) are arranged in relation to a substrate to be coated (1). The zones (13, 14 and 15) are connected by supply lines (21, 21a and 22) to a source of non film-forming gas (27) and to a gas source (28) that supplies fresh gas.